IXXN200N60B3H1 Search Results
IXXN200N60B3H1 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| IXXN200N60B3H1 |
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IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 200A SOT-227 | Original | 7 |
IXXN200N60B3H1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
Original |
IC110 IXXN200N60B3H1 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3 | |
ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
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Original |
10-30kHz IXXN200N60B3H1 IC110 110ns OT-227B, E153432 IF110 50/60Hz 200N60B3 ixxn200n60b3h1 IXXN200N60B3 200n60 | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR |
Original |
IXXN200N60B3H1 IC110 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3 |