IXTW Search Results

Contextual Info: HIGH PERFORMANCE ANALOG ¡N ÎE G fW E D CIRCUITS EL2 2 4 5 C/EL2 4 4 5 C Dual/QuadLow-Power 100 MHz Gain-of-2 Stable Op Amp . G en eral D escrip tio n The EL2245C/EL2445C are dual and quad versions of the pop­ ular EL2045C. They are high speed, low power, low cost mono­

21N100

Abstract: 21N10 ixtw DIXYS IXTN21N100
Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ

tundra scv64

Contextual Info: Table of Contents 1 General Information. 1-1 1.1 Introduction. 1-1 1.2

schematic diagram Modified Sine wave dc-ac inverter

Abstract: RF Amplifier 500w 175 mhz 12v to Amplifier 200w schematic diagrams schematic diagram Power supply 500w metal film fused resistor 47 EL2045C EL2245CN EL2245CS EL2445CN EL2445CS
Contextual Info: E L 2245 C / E L 2445 C D ual/Q uadLow-Power 100 MHz Gain-of-2 Stable Op Am p HIGH PERFORMANCE ANALOG ¡N ÎE G fW E D CIRCUITS . G en eral D escrip tio n The EL2245C/EL2445C are dual and quad versions of the pop­ ular EL2045C. They are high speed, low power, low cost mono­

Contextual Info: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V