IXTT52N30P Search Results

IXTT52N30P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTT52N30P		IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF	585.56KB	5

IXTT52N30P Price and Stock

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IXYS Corporation IXTT52N30P MOSFET N-CH 300V 52A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT52N30P	Tube			300	1 - 10 - 100 - 1000 $5.09 10000 $5.09	Buy Now
Mouser Electronics	IXTT52N30P					1 - 10 - 100 - 1000 $5.38 10000 $5.38	Get Quote
TTI	IXTT52N30P	Tube			300	1 - 10 - 100 - 1000 $4.97 10000 $4.97	Buy Now
TME	IXTT52N30P				1	1 $7.96 10 $6.33 100 $5.69 1000 $5.69 10000 $5.69	Get Quote
Littelfuse Inc IXTT52N30P Disc Mosfet N-Ch Std-Polar To-268Aa/ Tube \|Littelfuse IXTT52N30P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTT52N30P	Bulk			300	1 - 10 - 100 - 1000 $5.34 10000 $5.34	Buy Now

IXTT52N30P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
52n30p Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30 Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300	Original	IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30	PDF
52N30P Contextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM	Original	IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P	PDF
ixtq52n30p Abstract: IXTT52N30P Contextual Info: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M	Original	IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P	PDF
Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V	Original	IXTQ52N30P IXTT52N30P O-268 52N30P	PDF
52n30p Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous	Original	IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P	PDF