IXTQ52N30P Search Results
IXTQ52N30P Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXTQ52N30P |
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Discrete MOSFETs: Standard N-channel Types | Original | 585.56KB | 5 |
IXTQ52N30P Price and Stock
IXYS Corporation IXTQ52N30PMOSFET N-CH 300V 52A TO3P |
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IXTQ52N30P | Tube | 1 |
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IXTQ52N30P | 534 |
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IXTQ52N30P | 199 | 9 |
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IXTQ52N30P | Tube | 300 |
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IXTQ52N30P | 199 | 1 |
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IXTQ52N30P | 43 | 1 |
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Littelfuse Inc IXTQ52N30PTrans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-3P |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ52N30P | 300 | 13 |
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IXTQ52N30P | 240 |
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IXYS Corporation IXTQ52N30P (POLAR)Mosfet, N-Ch, 300V, 52A, To-3P Rohs Compliant: Yes |Ixys Semiconductor IXTQ52N30P |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXTQ52N30P (POLAR) | Bulk | 196 | 1 |
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IXTQ52N30P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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52n30p
Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
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IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30 | |
52N30PContextual Info: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM |
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IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P | |
ixtq52n30p
Abstract: IXTT52N30P
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IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P | |
Contextual Info: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V |
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IXTQ52N30P IXTT52N30P O-268 52N30P | |
52n30p
Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
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IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P |