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    IXTA160N075T Search Results

    IXTA160N075T Datasheets (2)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA160N075T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263 Original PDF 5
    IXTA160N075T7
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 160A TO-263-7 Original PDF 5
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    IXTA160N075T Price and Stock

    IXYS Corporation

    IXYS Corporation IXTA160N075T

    MOSFET N-CH 75V 160A TO263
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    IXYS Corporation IXTA160N075T7

    MOSFET N-CH 75V 160A TO263-7
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    IXTA160N075T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTP160N075T

    Abstract: IXTA160N075T 160N075 160N075T 175C 25a64
    Contextual Info: Preliminary Technical Information IXTA160N075T IXTP160N075T TrenchMVTM Power MOSFET = 75 V = 160 A Ω ≤ 6.0 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTA160N075T IXTP160N075T O-263 160N075T_ IXTP160N075T IXTA160N075T 160N075 160N075T 175C 25a64 PDF

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T IXTP160N075T VDSS ID25 = 75 V = 160 A Ω ≤ 6.0 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTA160N075T IXTP160N075T 160N075T_ PDF

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N075T7 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA160N075T7 O-263 160N075T PDF

    160N075T

    Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA160N075T7 VDSS ID25 RDS on = 75 V = 160 A ≤ 6.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		IXTA160N075T7 O-263 160N075T 160N075T PDF

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T PDF