IXRH 50N120 Search Results

50N100

Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
Contextual Info: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol

Contextual Info: Advanced Technical Information IXRH 50N60 VCES = 600/1200 V IXRH 50N120 IC90 = 50 A High Voltage RBIGBT Forward and Reverse Blocking IGBT VCE sat = 2.6 V tfi = 300 ns N-Channel, Enhancement Mode C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Conditions

40N120

Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
Contextual Info: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings

50N60

Abstract: 50N100 50n80 40N160 9N160G 50N6
Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C