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    IXGP24N60C4D1 Search Results

    IXGP24N60C4D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGP24N60C4D1
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 Original PDF 2

    IXGP24N60C4D1 Datasheets Context Search

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    IXGP24N60C4D1

    Abstract: IC110
    Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1 PDF

    IXGP24N60C4D1

    Abstract: IF110 IXGP24N60C ups 017
    Contextual Info: Advance Technical Information High-Gain IGBT w/ Diode IXGP24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGP24N60C4D1 IC110 O-220 IF110 338B2 IXGP24N60C4D1 IF110 IXGP24N60C ups 017 PDF

    Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGP24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 44ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGP24N60C4D1 O-220 IF110 11ective 338B2 PDF