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    IXGH40N120B2D1 Search Results

    IXGH40N120B2D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXGH40N120B2D1
    IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 75A 380W TO247 Original PDF 7
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    IXGH40N120B2D1 Price and Stock

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    IXYS Corporation IXGH40N120B2D1

    IGBT PT 1200V 75A TO-247AD
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    DigiKey IXGH40N120B2D1 Tube 1
    • 1 $17.67
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    Mouser Electronics IXGH40N120B2D1 61
    • 1 $18.03
    • 10 $13.18
    • 100 $13.18
    • 1000 $9.63
    • 10000 $9.63
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    TTI IXGH40N120B2D1 Tube 300
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    TME IXGH40N120B2D1 1
    • 1 $22.03
    • 10 $17.25
    • 100 $15.62
    • 1000 $15.62
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    Littelfuse Inc IXGH40N120B2D1

    Disc Igbt Pt-Mid Frequency To-247Ad/ Tube |Littelfuse IXGH40N120B2D1
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    Newark IXGH40N120B2D1 Bulk 300
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    IXGH40N120B2D1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXGH40N120B2D1

    Abstract: igbt ixgh40n120 rthjc igbt to247
    Contextual Info: Product Detail Part Num: Description: Configuration: Package Style: Status: IXGH40N120B2D1 Mid-Frequency Range 15 kHz - 40 kHz , IGBT with freewheeling diode Copack (FRD) TO-247 Not for New Designs: Contact the factory for lead times (part is still available for purchase).


    Original
    IXGH40N120B2D1 O-247 IC110, IXGH40N120B2D1 igbt ixgh40n120 rthjc igbt to247 PDF

    Contextual Info: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM


    Original
    IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns O-247 IF110 PDF

    g40n120

    Abstract: 40n120 ixgh40n120 IXGT40N120B2D1 IXGH40N120B2D1 ixgh40n12 ixgh40n1 IF110 2VGE
    Contextual Info: High Voltage IGBTs w/Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = IC110 = VCE sat ≤ tfi(typ) = 1200V 40A 3.5V 140ns TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 1200 1200 V V VGES VGEM


    Original
    IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns O-247 IF110 g40n120 40n120 ixgh40n120 IXGT40N120B2D1 IXGH40N120B2D1 ixgh40n12 ixgh40n1 IF110 2VGE PDF

    g40n120

    Contextual Info: High Voltage IGBT with Diode IXGH40N120B2D1 IXGT40N120B2D1 VCES = 1200V IC110 = 40A VCE sat ≤ 3.5V tfi(typ) = 140ns Symbol Test Conditions VCES TC = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ± 20 V VGEM Transient


    Original
    IXGH40N120B2D1 IXGT40N120B2D1 IC110 140ns IC110 IF110 O-247 O-268 g40n120 PDF