IXFK55N50 Search Results

IXFX55N50F

Abstract: IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247
Contextual Info: Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)

Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs VDSS ID25 IXFK55N50F IXFX55N50F = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)

50n50

Abstract: 55N50 150N50 IXFK55N50
Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR

Contextual Info: HiPerFETTM Power MOSFET IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C

IXFG 55N50

Abstract: ISO264 ISO264TM IXFK55N50 55N50
Contextual Info: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500

IXFH32N50Q equivalent

Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
Contextual Info: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω

Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ixys ixfn 55n50

Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Contextual Info: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)

50n50

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW

Contextual Info: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

Contextual Info: HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM Electrically Isolated Back Surface VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500

IXDD 614

Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
Contextual Info: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers

50n50

Contextual Info: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings

ixys ixfn 55n50

Abstract: ixys ixfn55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

MD 202

Abstract: IXFX55N50 IXFK55N50 SOT-227B Outline IXFN55N50 55N50 "SOT-227 B" dimensions PLUS247 55n5
Contextual Info: IXFK 55N50 IXFX 55N50 IXFN 55N50 HiPerFETTM Power MOSFET VDSS ID25 RDS on t rr Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 V V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 IDM TC = 25°C

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

IXFd50n20

Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type

50n50

Abstract: IXFK55N50 ISOPLUS247 55n50
Contextual Info: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C

IXFN40N50

Contextual Info: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

55n50

Abstract: ixys ixfn 55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings