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IXYS Corporation IXDN630MYI Gate Drivers 9V 5-PIN TO-263 MOSFET DRIVER; 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXDN630MYI	Tube	250		50	1 - 10 - 100 $5.81 1000 $5.47 10000 $5.47	Buy Now
IXYS Corporation IXDD630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER; 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXDD630CI	Tube	250		50	1 - 10 - 100 $5.70 1000 $5.37 10000 $5.37	Buy Now
IXYS Corporation IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER; 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXDN630CI	Tube	100		50	1 - 10 - 100 $5.96 1000 $5.47 10000 $5.47	Buy Now
IXYS Corporation IXDD630MYI Gate Drivers 9V 5-PIN TO-263 MOSFET DRIVER; 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXDD630MYI	Tube			5	1 - 10 $7.01 100 $5.41 1000 $5.30 10000 $5.30	Buy Now
IXYS Corporation IXDN630YI Gate Drivers 12.5V 5-PIN TO-263 MOSFET DRIVER; 30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXDN630YI	Tube			250	1 - 10 - 100 - 1000 $4.85 10000 $4.85	Buy Now

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IXD_630 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXDN630 Abstract: IXDD630YI IXDI630CI IXDN630YI IXDI630 IXDD630 IXDD630MYI IXDD630CI IXDN630CI IXDD630MCI Contextual Info: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V	Original	30-Ampere IXDD630/IXDI630/IXDN630 630-R01 IXDN630 IXDD630YI IXDI630CI IXDN630YI IXDI630 IXDD630 IXDD630MYI IXDD630CI IXDN630CI IXDD630MCI	PDF
IXDN630 Abstract: 20/dp 630 ixys Contextual Info: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection	Original	30-Ampere IXDD630/IXDI630/IXDN630 630-R02 IXDN630 20/dp 630 ixys	PDF
IXDD630 Abstract: IXDN630 Contextual Info: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V	Original	30-Ampere IXDD630/IXDI630/IXDN630 630-R00G IXDD630 IXDN630	PDF
IXD_630 Abstract: IXDN630 IXDI630 IXDD630 ixdd630myi IXDD630YI igbt transformer driver IXDD630MCI Contextual Info: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers INTEGRATED CIRCUITS DIVISION Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection	Original	30-Ampere IXDD630/IXDI630/IXDN630 630-R03 IXD_630 IXDN630 IXDI630 IXDD630 ixdd630myi IXDD630YI igbt transformer driver IXDD630MCI	PDF
Contextual Info: IXD_630 30-Ampere Low-Side Ultrafast MOSFET Drivers Features Description • 30A Peak Source/Sink Drive Current • High Operating Voltage Capability: 35V • -40°C to +125°C Extended Operating Temperature Range • Under-Voltage Lockout Protection • Logic Input Withstands Negative Swing of up to 5V	Original	30-Ampere IXDD630/IXDI630/IXDN630 630-R01	PDF
IXEP1400 Abstract: CPC1706 CPC1020N Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.	Original	CH-2555 N1016, IXEP1400 CPC1706 CPC1020N	PDF
hcpl 322j Abstract: hcpl-322j HCPL316 Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316	PDF
IRFD630 Abstract: HCPL-322J HCPL322J TO-247AB Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA05JT12-247 O-247AB GA05JT12 00E-47 26E-28 77E-10 62E-10 00E-3 IRFD630 HCPL-322J HCPL322J TO-247AB	PDF
IXEP1400 Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844 Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.	Original	CH-2555 N1016, IXEP1400 CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844	PDF
LBA716 Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219 Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division	Original	N1016, CH-2555 LBA716 IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219	PDF
Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3	PDF
hcpl-322j Abstract: hcpl 322j Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j	PDF