IX 3368 Search Results

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

J113-18

Abstract: U1897-18 2N5653-54 PN4091
Contextual Info: GATE IS BACKSIDE CONTACT s n-channel JFETs . designed for . S ilic o n ix • Analog Switches B E N E F IT S : ■ Commutators • ■ Choppers ■ Integrator Reset Switch No O ffset or Error Voltages Generated by Closed Switch. Purely Resistive. High Isolation Resistance From

AN73-1 fet

Abstract: jfet AN73 2n4117 jfet VCR2N equivalent 2N3458 low noise dual P-Channel JFET 2N3909 siliconix AN73-7 2N5909CHP 2n4117 equivalent
Contextual Info: VCR7N VCR5P VCR4N VCR3P voltage-control led resistor FETs designed for . . . nt •Small Signal Attenuators ■ Filters ■Am plifier Gain Control ■Oscillator Amplitude Control o S itò B o n ix rfo rm a n c e P C PE T O -18 Set Section 7 -*C g c H^ O S

2N3458

Abstract: 2N3459 2N3460 2N3368-70 2N3436-8 2N3458-60 2N4338 2N4338-41 2N5196-9 2N5545-47
Contextual Info: a S ilic o n ix Performance Curves N P See Sectiori 5 2N3459 • Sm all-Signal Low Noise Amplifiers 2N3458 n-channel JFETs designed for . BENEFITS • Operates from High Supply Voltages BV q s s > 5 0 V 2N3460 TO-18 See Section 7 •ABSOLUTE M AXIM UM RATINGS 25°C

2n3458

Abstract: 2N3368-70 2N3458-60 2N3436-8 PN4302 U231 PN4303 equivalent J204-18 PN4304 2N4338-41
Contextual Info: PN4302 PN4303 P N 4 30 4 PN4302-18 PN4303-18 PN4304-18 n-channel JFETs designed fo r H . S ilic o n ix Perform ance Curves N P See Section 5 • General Purpose Amplifiers B EN EFITS • Low Cost • High Input Impedance I q = 35 pA Typically Low Noise ■¡in = 5 n VA /Ffz Typically @ 1 kHz

J201 equivalent

Abstract: 2N3368 2N4338-41 2N3368-70 2N3436-8 2N3458-60 2N4338 2N5196-9 2N5545-47 U231-5
Contextual Info: J204 J204-18 n-channel JFETs designed fo r s S ilic o n ix . Performance Curves NP See Section 5 • G en eral Purpose Sw itching B EN EFITS • Very Low Leakage T O -9 2 See Se ction 7 ABSOLUTE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) .—25V

2N4338-41

Abstract: 2N5196-9 U231-35 2N3368 J201 equivalent 2N4338 2N5196 2N5199CHP 2N5545-47 2N5547CHP
Contextual Info: s monolithic dual n-channel JFET Siliconix designed f o r . . . • ■ Low and Medium Frequency A m pli­ B E N E FIT S: fiers • M inim um System Error and Calibra­ tion 5 m V Offset M aximum I2N 51 96 • Low D rift W ith Temperature 5 /uV/°C Maximum 2N 5196)

2N3369

Abstract: 2N3370 JFET 2N3369 2N3368 2N3368-70 J201 equivalent 2N3436-8 2N3458-60 2N4338 2N4338-41
Contextual Info: 2N 3370 2N3369 Sm all-Signal Low P ow er Applications 2N3368 n-channel JFETs aesignea ?or • • • Siliconix Performance Curves NP see sections TO-18 See Section 7 ‘ ABSOLUTE M AXIM UM RATINGS 25°C Gate-Drain or Gate-Source Voltage (Note 1) . . . .-4 0 V

NEC uPD70325

Abstract: NEC V25 70320 uPD79011 nec v25 ali m 3329 SA160M UPD70325-10 murata hfs V25TM hJST
Contextual Info: NEC V25/V35 FAMILY MPD70320 V25 ,70322,70325(V25+),70327(V25S),79011 |jPD70330(V35),70332,70335(V35+),70337(V35S),79021 V25 /V35™ FAMILY 16/8-BIT SINGLE CHIP MICROCOMPUTER The V 2 5 /V 3 5 family members are single chip microcomputers integrating a 16-bit

ix 3368

Abstract: logic selection guide
Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for

bt485

Abstract: BT485KPJ135 t484
Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. B t4 8 5 Distinguishing Features Applications 135, 110, 85, 75 MHz Pipelined Operation 8:1, 4:1, 2:1, 1:1 Multiplexed Pixel Ports

Brooktree BT885

Abstract: Brooktree bt885 110 mhz bt812 equivalent BT812 bt885 67VO interlace
Contextual Info: MW 21 1993 Advance This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Three 256 x 8 Color Palette RAMs • 135 and 110 MHz Pipelined

mc68701 probug

Abstract: MC144100 M68KVM02 user manual m6809 EXORCISER motorola MC146805G2 MC1468705G2 AN/mc68701 probug
Contextual Info: Motorola’s Microcomputer Families i Reliability Data Sheets Mechanical Data E Technical Training Memory Products Logic and Special Function Products Development Systems and Board-Level Products E M motorola MICROCOMPUTERS Prepared by Technical Information Center

BU428A

Abstract: ix 3368 BU428 BU426-BU426A BU426 BU-428 ic ix 3368
Contextual Info: MOTOROLA SC 1HE D I t3b?aS4 0004013 b | XSTRS/R F 7^ 33 '!$ MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE NPN SILICON TRANSISTOR 6 A M PERES . , . designed for use in the switched m ode power supply o f 9 0 ° and 1 1 0 ° colour television receivers.

FD2S

Abstract: ix 3368 AO222 chapter 4 AO333 STD80 STDM80 jtag samsung FD6S samsung 649
Contextual Info: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

dl2d

Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
Contextual Info: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5

Samsung ASIC

Abstract: ix 3368 OA321D2 AO4111 AO2222 oa211 diode STD111 LD2D2 SCG16
Contextual Info: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change STD111 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5

ANA 618* voltage regulator

Abstract: L103001 ix 3368 ana 618 equivalent
Contextual Info: Btl03 Distinguishing Features Applications High-Resolution Color Graphics CAE/CAD/CAM Image Processing Video Reconstruction 75, 30 MHz Operation Triple 4-bit D/A Converters ±1/16 LSB Differential Linearity Error +1/8 LSB Integral Linearity Error RS-343A/RS-170-Compatible

IR P 648 H

Abstract: MC10137 MC10141 MC10537 MCM10140 MCM10142 MCM10143 MCM10144 MCM10145 MCM10147
Contextual Info: 10.000 LOGIC DIAGRAMS N u m b e r s in p a r e n t h e s i s d e n o t e p i n n u m b e r s f o r F p a c k a g e Case 6 5 0 FUNCTIONS AND CHARACTERISTICS (c o n tin u e d ) Type Function U n iv e rs a l D e c a d e C o u n te r B i- Q u in a r y C o u n t e r

samsung UC 40207

Abstract: samsung 943 UC 40207 dupont 943
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 3 6 5 5 N o rth First S tre e t 3 0 0 P a rk B o u le vard 1 1 9 R u s s e ll S tre e t S an José, C A 951 34 S u ite 2 1 0 L itlleto n , M A 0 1 4 6 0 T E L : 4 0 0 9 5 4 -7 0 0 0

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

Contextual Info: ESI IS22C040/041/042 32 to 40 SEC INSTANT VOICE ROM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES STP stop pulse generated at end of playback • Voice length at - 8 KHz sam pling is 32 seconds BUSY signal for CPU control - 6 KHz sam pling is 40 seconds Two LEDs flash at 3 Hz interval