ITT POWER DIODES Search Results

ITT DIODE

Abstract: transistor ITT DIODE ITT pnp low power fast switching transistor Solitron Transistor
Contextual Info: Contran ^ ©tyj©? ©Mmcex T Y P IC A L SO L IT R O N C H IP C O N ST R U C T IO N De/ices. Inc. N P N TRIPLE DIFFUSED PLA N A R POWER TRANSISTO R BASE CONTACT — ! a EM ITT ER CONTACT \ EM ITT ER BASE A Solitron's triple diffused planar construction provides excellent

Contextual Info: N AUER PHILIPS/DISCRETE 55E D • bhS3T31 QQlbaQ? 3 ■ Power Devices BREAKOVER DIODES TYPE NO. PACKAGE OUTLINE BREAKOVER VOLTAGE ±12% . TRANSIENT ' PEAK CURRENT HOLDING CURRENT It r m 8/20/rS | 10/700/rS itt 25°C SWITCHING CURRENT la 25°C dv/dt i ON-STATE

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

Contextual Info: CS-279 FLOPPY DISK LOGIC CIRCUIT and STEPPER MOTOR DRIVER DESCRIPTION The CS279 is a floppy disk logic circuit with on chip bipolar Stepper Motor Drivers and clamp diodes. It provides all the logic functions needed for a standard disk drive. The CS279 is compatible with the CS570,

floppy controller stepper motor

Abstract: TRK00 em 400 stepper
Contextual Info: Floppy Disk Logic Circuit and Stepper Motor Driver Description T h e C S -2 7 9 is a floppy disk logic circuit w ith on ch ip bip o lar stepper m o to r drivers and cla m p diodes. It provides all the logic fu n ctio ns ne eded for a sta n ­ dard disk drive. T h e C S -2 79 is c o m p a t i ­

BB105

Abstract: BB105 siemens
Contextual Info: Silicon Hyperabrupt Tuning Diodes DKV4100 Series Features • ■ ■ ■ Direct Replacement for Motorola, Siemens, and ITT BB105 and M V 1 09 Types Highest Q Possible Reproducible C vs. V Characteristics Available in All Standard Packages Types ■ ■ Description

BB529

Abstract: BB521 BB531 pin diode do35 ITT BB221 b8221 1N6263 BB221 BB521 itt LL103A
Contextual Info: SCHOTTKY DIODES Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times. Using the type designations L.L101A, LL103A, and so on, these Schottky Barrier diodes are available in the MiniMELF package with the

TB840

Abstract: TB834 TB820 TB810 TB 810 MDB115 TB826 TB-823-HA TB850 TB-834-HA
Contextual Info: BROADBAND SERIES TB-8/TB-8-HA SP8T SWITCH HKjH ISOLATION-REFLECTlVE ABSOflPTIVE 0.02-18 GHz GENERAL INFORMATION: Series TB-8 and TB-8-HA switches are medium power devices that oper­ ate over relatively wide frequency ranges. Carefully selected diodes placed

Contextual Info: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T *o 3 -oq SILICON DIODES G e n e ra l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a c k a g e & D O -3 4 P a c k a g e Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0

TF-450

Abstract: TF-459 TF-474 TF-435 TF-438 TF-492 tN494 TF480 TF-429 tf423
Contextual Info: NARROWBAND SP4T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-4/TN-4-A GENERAL INFORMATION: Series TF-4 and TN-4-A narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, serles-shunt, or shunt configurations pro­

TL556

Abstract: TB557 TL-549 tl549 TL-591 TL-528 TB-577-A TL564 TB-529-A TL-568
Contextual Info: BROADBAND SP5T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TL-5/TB-5-A GENERAL INFORMATION: Series TL-5 and TB-5-A switches are medium power devices that operate over relatively wide frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec­

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

signetics DS3611

Abstract: 75451 24 SIGNETICS DS3612N DS3611N DS3611T SIGNETICS SIGNETICS 14 PIN DS3613N CMOS Dual Peripheral Drivers
Contextual Info: Signetics Interface - Peripheral DS3611/3612/3613/3614 - C O N N E C T IO N D IA G R A M High Voltage Peripheral Driver G E N E R A L D E SC R IPTIO N The D S 3611 series o f dual peripheral drivers was designed fo r app lica tions where higher breakdow n voltage is required

vp 3082

Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,

16 pin diagram of uln 2003

Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Contextual Info: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington

Contextual Info: KODENSHI CORP 25E D 5 2 L»2baa o a a a i a s a -H t- n K CGa A s INFRARED EMITTING DIODES * "J i f * ) ' - * f - "j 5 EL-SKLTBx i t g 'M U ? ') > 7 d im e n s io n s Unit: mm) K T 't o X f c t t f f lU *g l6 ]tt£ & < L T l ' i T . The EL-SKLT is a high power GaAs IRED mounted in a

general semiconductor

Contextual Info: INTRODUCTION General Semiconductor is a world leader in the design, manufacture, and sale of low-to-medium power rectifiers, transient voltage suppressors, small signal diodes, zener diodes and transistors in axial, bridge and surface mount packages. These products are used throughout the electronics industry to condition current

Zener diode 5.6 itt

Abstract: Zener diode itt Zener diode itt 5.6 Zener diode itt 150 V itt diodes 8.2 0SGH33 1N4742A allegro 51
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0S0M338 QQDbS33 460 ■ ALGR ZENER DIODES 1 WATT0, W SERIES, 5.6 V to 51 V ELECTRICAL CHARACTERISTICS at TA = + 25°C, T, < + 175°C, VF = 1.5 V Max. @ IF = 200 mA Surge Max. Zener Impedance Max. Leakage Current Current Device

7150A

Abstract: 15CA
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK2 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Curren" Gain: h^g=80 Min. (Ic=150A)

Contextual Info: SDP8004/8014 Optoschm itt Detector Totem-Pole Output FEATURES • Side-looking plastic package • 55° nominal acceptance angle • TTULSTTL/CMOS compatible • Totem-pole output • Buffer (SDP8004) or inverting (SDP8014) logic available • High noise immunity output

7471N

Contextual Info: 1 N 7 4 6 th ru 1 N 7 5 9 A , -1 and 1 N 4 3 7 0 th ru 1 N 4 3 7 2 A , -1 D O -35 SC O T T S I >.M F. .17 F o r m o r e i n f o r m a t i o n c a ll; 602 941-6300 1% and 2% VERSIONS “C ” and “D” A VA ILA B LE SILICON 500 mW ZENER DIODES FEA TU R ES

Contextual Info: T -Q h ll - H i DUAL POWER SCHOTTKY DIODES TCB3045C 18A each, 45V P A C K A G E O U T LIN E • 30 Amp Peak, Common Cathode TO -204AA TO-3 • Two Schottky Rectifiers Similar to 1N6391 • Very Low Forward Voltage • Low Recovered Charge • Available in Three Hermetic Packages

Contextual Info: APX b?E D • bb53T31 0025705 32b N AMER PHILIPS/DISCRETE BYD77 SERIES yv EPITAXIAL AVALANCHE DIODES Rectifier diodes in hermetically sealed leadless SMID*-envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics and are capable

MG25N6EK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25N6EK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The C o l l e c t o r i s I s o l a t i o n from Case. . 6 Pover T r a n s i s t o r s and 6 F r e e Wheeling Diodes a r e B u i l t I n t o 1 P ac kag e.