103A Search Results

M103A

Abstract: TSM103 TSM103A
Contextual Info: TSM103/A D U A LO P E R A TIO N A L A M PLIFIER AND VOLTAGE REFERENCE O P ER A TIO N A L A M P LIFIER • LOW IN PU T O F FS E T VOLTAGE : 0.5m V typ.forTSM 103A ■ LOW SU PPLY C U R R E N T : 350|jA/op. @ Vcc = 5V ■ M ED IU M BANDW IDTH (unity gain) : 0.9M H z

Contextual Info: TECHNICAL DATA SHEET SMB 59K160-103A4 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-10, CECC 22130, US MIL-C-39012 Documents Assembly instruction 59 G2 Material and plating RF_35/11.05/3.1 Connector parts

Contextual Info: APT100F50J 500V, 103A, 0.036Ω Max, trr ≤390ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: REVISIONS REV. DESCRIPTION A N o m in a l Coil V o lta g e 2 4 V dc 2 8 V dc PRODUCTION RELEASE DATE APPROVED 2 /1 /0 7 K.R. SP3T P a rt N u m b e r SP4T SP6T 5 3 1 J Y - 4 8 1 103A 5 3 1 J Y - 4 3 1 103A 541J Y -4 8 1 1 0 3 A 541JY -4 3 1 1 0 3 A 561JY -4 8 1 1 0 3 A

module siemens EM 235

Abstract: siemens EM 235 siemens igbt BSM 100 siemens igbt BSM 100 gd siemens igbt
Contextual Info: SIEMENS BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate BSM 75 GD 120 DN2 LU Type h 1200V 103A Package Ordering Code ECONOPACK 3

thermistor 502AT

Abstract: 103AT 503AT 203AT 502AT thermistor 5-03AT 202AT thermistor 103AT
Contextual Info: AT-5 THERMISTOR AT-5 AT-5 thermistor is available in taping. Part number 103 AT-5-TP Taping Shape High-precision AT thermistor Rated zero-power resistance at 25ЊC Dimensions AT-5 Epoxy ␾0.5 Tin plated CP leads 3Ϯ1 Specifications 6Ϯ1 1 Part No R25 103AT-5

Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

C67070-A2516-A67

Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

R25mm

Abstract: L2608 0809L
Contextual Info: DRAWING N o .: Customer Information Sheet | H 2 10 2 A 0 1 / H 2 103A0 I IF IN DOUBT - ASK | c | NOT TO SCALE | THIRD ANGLE - PROJECTION 6 . 02 | ALL DIMENSIONS IN - GjO.96 -I ko. ^ 0. 88 5 1 ± 0 .08 D CP I 13 | 2 6 .08.091 NAME 11 S S . I NOTES: I. UNLESS

4AS-30W-SS

Abstract: L03A 4AS-30W FEI Communications 103A FE-103A SMA CONN
Contextual Info: LOW PHASE NOISE QUARTZ OSCILLATORS C*° Series FE-103A I* .{I If* . The FEI Series FE-103A features operation from 5 MHz to 20 MHz with low phase noise and excellent stability. Typical phase noise is -142 dBc at 10 Hz from the carrier, -148 dBc at 100 Hz from

bsm 75 gd 120 dn2

Abstract: bsm 75 gd 120 dn2 diagram
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

Contextual Info: TECHNICAL DATA SHEET SMB 59K160-103A4 STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to IEC 60169-10, CECC 22130, US MIL-C-39012 Documents Assembly instruction 59 G2 Material and plating RF_35/11.05/3.1 Connector parts

Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

Contextual Info: Temperature measurement Transmitter with integrated probe TT-103A-G1/8-LI6-H1140-L013 • Factory setting 0…150 °C ■ Analog output 4…20 mA ■ Temperature range 0…150 °C Wiring diagram Edition • 2013-07-14T00:41:55+02:00 General description Type code

SSL-LX3044AD

Contextual Info: UNCONTROLLED DOCUMENT SC:0.25 UNDER REVISION REV. PART NUMBER REV. S S F - L X H 103AD A E.C.N. NUMBER AND REVISION COMMENTS A DATE E.C.N. #10BRDR. & REDRAWN IN 3D. 12.16.02 2,4 [0 ,0 9 4 ] 4.60 [0.181] 6.50 [0 ,2 5 6 ] h— ELECTRO-OPTICAL CHARACTERISTICS Ta = 25X

bsm 75 gd 120 dn2

Abstract: GD 150 R 1200
Contextual Info: euoec F BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 75 GD 120 DN2 1200V 103A ECONOPACK 3 C67070-A2516-A67

C67070-A2516-A67

Abstract: 260-D
Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

Contextual Info: BSM 75 GD 120 DN2 IGBT Power Module • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 75 GD 120 DN2 1200V 103A IC Package Ordering Code ECONOPACK 3 C67070-A2516-A67

217B

Contextual Info: - 143 »C o m linear t À Æ fS Ta = 25°C fit in # i o r 103A I, AM ; m i -ST D -Ê nil ~r3 CD co CO Z ii é -j 'Â % S'! Vcc(V) | 'ai (Ta = 25”C) It •ft K 'te £ it & m I ft 'b ! m m & ft * mA V cc ! ft ip ¿ V .o U T /iV/’C ¿ V io la t fj\/° c

ut 803A

Abstract: N2023 N2028 1403A CR51-203A 103A 703a 803A 2N2026 UNF-2A
Contextual Info: It AV 85°C 55 A Itsm 760 I21: A O u tlin e 3200 Type No. dv/dt = 20V/p! dv/dt= 200V/p S CR51-103A CR51-103AA CR51-203A CR51-203AA CR51-303A CR51-303AA CR51-403A CR51-403AA CR51-503A CR51-503AA CR51-603A CR51-603AA CR51-703A CR51-703AA CR51 -803A CR51-803AA

20S45

Abstract: C67078-S1357-A2 103AL
Contextual Info: BUZ 103AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on

Contextual Info: Temperature measurement with transistor switching output TC-103A-G1/8-AP6-H1140-L024 • Switchpoint, factory set ■ Temperature range 0…150 °C Wiring diagram General description Edition • 2013-07-14T00:42:18+02:00 Sensor with integrated probe Different probe

Contextual Info: 411D 103A Multi Media Card MMC Socket ,Top Mount P.C.B. Layout How To Order 103A- T A A T: Top Mount Contact Plating Stand Off Dimention R: Reverse Mount A: 15u" gold plating A: 0 mm B: 3u" gold plating 21 411D 103A Multi Media Card (MMC) Socket ,Reverse Mount

isotop mosfet 100V

Abstract: APT100M50J MIC4452 A1490
Contextual Info: APT100M50J 500V, 103A, 0.036Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure