N2028 Search Results

ut 803A

Abstract: b 803a 803A cr31-803a CR27-1203RCA CR31-1103AA CR2810 CR51-303A 2n20 CR51-403A
Contextual Info: MEDIUM POWER THYRISTORS — 32 to 70A h- AV B6'C . >TSM |2 t 32 A 500 A 1250 A2sec Outline 2 Type No. d v /d t = 2 0 V /|jS d v /d t= 2 0 0 V /p S V RRM CR27-903RC CR27 -1003RC CR27-1103RC CR27 1203RC CR27 -1303RC CR27-1403RC CR27 1503RC 800 900 1000 1100

Contextual Info: A Product Line of Diodes Incorporated N2028USS ADV AN CE I N FORM AT I ON 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max V BR DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V

DMN2028USS

Abstract: DMN2028USS-13 N2028
Contextual Info: N2028USS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) ID 20mΩ @ VGS= 4.5V 5.6A @ TA = 25°C 28mΩ @ VGS= 2.5V 4.7A @ TA = 85°C • • • • • • • • NEW PRODUCT 20V Low On-Resistance Low Input Capacitance

ut 803A

Abstract: N2023 N2028 1403A CR51-203A 103A 703a 803A 2N2026 UNF-2A
Contextual Info: It AV 85°C 55 A Itsm 760 I21: A O u tlin e 3200 Type No. dv/dt = 20V/p! dv/dt= 200V/p S CR51-103A CR51-103AA CR51-203A CR51-203AA CR51-303A CR51-303AA CR51-403A CR51-403AA CR51-503A CR51-503AA CR51-603A CR51-603AA CR51-703A CR51-703AA CR51 -803A CR51-803AA

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

DMN2028USS-13

Abstract: DMN2028USS
Contextual Info: A Product Line of Diodes Incorporated N2028USS ADVANCE INFORMATION 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max V BR DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V

Contextual Info: N2028USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ADVANCE INFORMATION ID max V BR DSS RDS(on) max TA = +25°C (Note 6) • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Output Leakage 20mΩ @ VGS= 4.5V

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll