ITT 1501 Search Results

ABB inverter motor fault code

Abstract: block diagram of suction pump CPC40441 ACS550 IM167R00 abb variable frequency drive wiring diagram Motor Control Center wiring diagram abb
Contextual Info: G L Pumps AQUAVAR CPC Centrifugal Pump Control Installation and Operation Manual Goulds Pumps ITT Industries IM167R00 G L Pumps 1 Table of Contents Section 1 SAFETY Use of Warnings and Notes . 4

diode ITT

Abstract: 1n4448 itt 1N4448 LL4448 QQQ317D
Contextual Info: ITT SEMICOND/ INTERMETALL blE D • 4bfl2711 0ÜG31t.ô fibE * I S I LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4448 K 3.510.1- Cathode Mark

diode 2U 88

Abstract: 1N4446 150D LL4446 2u 45 diode 2U DIODE ITT G 91 35
Contextual Info: ITT SEMICON] / INTERMETALL blE D • MbflB711 DDDBlbM 117 M I S I LL4446 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4446 •Cathode Mark - 3 .5 ± 0.1

MS27505

Contextual Info: KJM Series - Mil-DTL 38999 Series I With a proven history of engineering and manufacturing excellence spanning 100 years, ITT Cannon continues to deliver a broad range of innovative product solutions to enable our customers to meet their most demanding design requirements.

diode BA170

Abstract: BA170 BA170 diode ITT diode lsi BA170
Contextual Info: ITT SEMICOND/ INTERNETALL SÜE ]> • MbflS?!! GGOBTM? L3b M I S I BA170 'T-Ol-0‘1 Silicon Epitaxial Planar Diode for universal use in consumer electronic and for switching applications max. 1.9 0 T \ Cathode Mark m a x . 0 .5 2 <3 This diode is delivered taped.

Contextual Info: H E W L E T T - P A C K A R D / CI1PNTS blE » • 4 4 4 7 5 Ô 4 0 0 0 ô 4 b 0 ITT * H P A rmL'H ^ MHEWLETT PACKARD 7=Vf-A» JAN Qualified Ultra-Bright Hermetic Solid State Lamps* Technical Data 1N6609 JAN1N6609 JANTX1N6609 1N6610 JAN1N6610 JANTX1N6610 1N6611

Contextual Info: ASSEMBLY NUMBER LED COLOR LUMI ITT. VHMAXj «M M IV DM 'A ' DM DM Y X" .135 .020 .043 3.5 M TEST. COND. UMAX) • BVImA) 2.8 560 2 0 mA 1 00 585 2 0 mA 1 00 HM AXi •A) ta w 550-0204 GREEN 550-0304 YELLOW DIFFUSED .135 .020 .043 3.5 2.8 550-0404 RED D I F F U S E D

itt diodes

Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
Contextual Info: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot

2N7000

Abstract: 2N7000 Intermetall
Contextual Info: 2N7000 N-Channel Enhancem ent Mode OMOS Transistor 4 .6 1 Features - high input impedance low gate threshold voltage low drain-source ON resistance high-speed switching no minority carrier storage time CMOS logic compatible input no thermal runaway no secondary breakdown

BS-206

Abstract: BS-208 BS206 J162 ITT capacitance diode
Contextual Info: BS208 P-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input

ITT DIODE 129

Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
Contextual Info: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BF423

Contextual Info: BF421, BF423 PNP Silicon Epitaxial Transistors especially suited for application in class-B video output stages of TV receivers and monitors. 4.6 an “ As complementary types, the NPN transistors BF420 and BF422 are recommended. E -|ó 9 ò - TO-92 Plastic Package

bs209

Contextual Info: BS209 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown

Contextual Info: BS109 N-Channel Enhancement Mode DMOS Transistor <-6 . 3.6 I- ' I ; Ì Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway

SOT89A

Abstract: SOT-89A BS123
Contextual Info: BS123, BS623 N-Channel Enhancement Mode DMOS Transistors Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.

MJ15011

Abstract: 92 0151 MJ15012 XSTR
Contextual Info: MOTOROLA SC 6367254 iXSTRS/R DË”|t.3t.75SM D G f l l l l h F> MOTOROLA S C XSTRS/R F 9 6 D '8 U 16 D T - 3 3 -IS N P U MOTOROLA MJ15011 SEMICONDUCTOR PNP TECHNICAL DATA MJ 15012 A d v a n c e In fo r m a tio n 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

K274

Abstract: D4050
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Mem ory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818) 346-6416 FAX: (818) 346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

DR 6236

Abstract: tl 8819 str 8045 4411B D8024 str28 SF-02631 345B korea cable Neltron
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES • U.S.A. Southwest Memory products Southwest (Mtcroproducts) 22837 Ventura Blvd. Suits 305 Woodland Hills, C A 91 3 6 7 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

str 8045

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

tl 8819

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Northwest Southwest Memory products Southwest (Microproducts) 2 2 8 3 7 Ventura Blvd. Suite 305 W oodland Hills, C A 913 6 7 (8 1 8 )3 4 6 -6 4 1 6 FAX: (8 1 8 )3 4 6 -6 6 2 1 2 1 0 2 Business Center Drive Suite 169

MHPM7B8A120A

Abstract: td-100 6503A
Contextual Info: MOTOROLA Order this document by MHPM7BBA120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B8A120A Hybrid Power Module Motorola Prtfwnti D*v m Integrated Power Stage for 1.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake translstor/dlode In a single convenient package. The output