IT07891 Search Results

Contextual Info: SS0503SH Ordering number : EN8067A SANYO Semiconductors DATA SHEET SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)

A1006

Abstract: d1207
Contextual Info: SCH2825 注文コード No. N A 1 0 0 6 三洋半導体データシート N SCH2825 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタとショットキバリアダイオ−ドを 1 パッケージに内蔵した複合タイプ

SS0503SH

Contextual Info: SS0503SH 注文コード No. N 8 0 6 7 三洋半導体データシート N SS0503SH ショットキバリアダイオード 30V, 0.5A 整流素子 用途 ・スイッチングレギュレータ , コンバータ , チョッパ等の高周波回路整流用。

Contextual Info: SCH2825 Ordering number : ENA1006A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

Contextual Info: MCH5835 Ordering number : ENA0655 SANYO Semiconductors DATA SHEET MCH5835 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3443 and a schottky barrier diode (SS0503SH)

Contextual Info: SS0503SH Ordering number : EN8067A SANYO Semiconductors DATA SHEET SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)

SS0503SH

Contextual Info: SS0503SH Ordering number : ENN8067 SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V).

Contextual Info: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)

SCH2819

Abstract: SCH1419 8-2914
Contextual Info: SCH2819 注文コード No. N 8 2 9 1 三洋半導体データシート N SCH2819 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ（SCH1419）

82306

Abstract: SCH2811
Contextual Info: SCH2811 Ordering number : ENA0440 SANYO Semiconductors DATA SHEET SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package

MCH3435

Abstract: MCH5834 SS0503SH IT1180
Contextual Info: MCH5834 注文コード No. N A 0 5 5 8 三洋半導体データシート N MCH5834 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ MCH3435 とショットキバリアダイオード(SS0503SH)を 1 パッケージに

Contextual Info: SCH2811 Ordering number : ENA0440 SCH2811 Features • • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET and a Schottky barrier diode contained in one package

SCH2819

Abstract: SCH1419
Contextual Info: SCH2819 Ordering number : ENN8291 SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)

SCH1412

Abstract: SCH2808
Contextual Info: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)

a1006

Contextual Info: SCH2825 Ordering number : ENA1006 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package

Contextual Info: SCH2825 Ordering number : ENA1006A SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

Contextual Info: Ordering number : EN8067A SS0503SH Schottky Barrier Diode http://onsemi.com 30V, 0.5A, Low VF, Single SCH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V)

MCH5835

Abstract: MCH3443 SS0503SH
Contextual Info: MCH5835 Ordering number : ENA0655A SANYO Semiconductors DATA SHEET MCH5835 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3443 and a schottky barrier diode (SS0503SH)

Contextual Info: SS0503SH Ordering number : ENN8067 SS0503SH Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.42V) (IF=0.5A, VF max=0.47V).

marking xa

Contextual Info: SCH2825 Ordering number : ENA1006 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET and a Schottky Barrier Diode contained in one package

Contextual Info: Ordering number : ENA1006B SCH2825 N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode http://onsemi.com Features • • • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting

SCH2811

Abstract: A0440 A04403
Contextual Info: SCH2811 注文コード No. N A 0 4 4 0 三洋半導体データシート N SCH2811 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタとショットキバリアダイオードを 1 パッケージに内蔵した複合タイプで

SCH1412

Abstract: SCH2808 IT03302
Contextual Info: SCH2808 注文コード No. N 8 3 6 0 三洋半導体データシート N SCH2808 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・N チャネル MOS 型電界効果トランジスタ（SCH1412）

MCH3435

Abstract: MCH5834 SS0503SH
Contextual Info: MCH5834 Ordering number : ENA0558 SANYO Semiconductors DATA SHEET MCH5834 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3435 and a schottky barrier diode (SS0503SH)