ISQWATT220 Search Results

Contextual Info: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: S G S -T H O M S O N ¡m e ra « ¿ 5 7 S T P 3 N 100 S T P 3 N 1 0 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S T P 3 N 1 00 S T P 3 N 1 00FI . • . . . . R DS on dss 1000 V 1000 V Id < 5 0 < 5 0 3.5 A 2 A AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: VN B10N07/K10N07FM VNP10N07FI/VNV10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B10N 07 VNK1 0 N 07 F M VNP1 0 N 0 7 F I VN V10N 07 Vclamp 70 70 70 70 V V V V R D S o n 0.1 0.1 0.1 0.1 Q. a n Cl 11im 10 10 10 10 A A A A . . . . . . LINEAR CURRENT LIMITATION

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « M TP3055E M T P 3 0 5 5 E FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V MTP3055E M TP3055EFI dss 60 V 60 V R DS on < 0.15 < 0.15 a a Id 14 A 10 A • TYPICAL RDS(on) = 0.1 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

tp3055

Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Contextual Info: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

IRf 334

Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Contextual Info: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi

irf540

Abstract: IRF540FI irf540 circuit diagram IRF540 Rg
Contextual Info: SGS-THOMSON ¿7 # KLU 1T^ o [MD(gS IRF540 IRF540FI N -C H A N NELEN HAN C E M E NT MODE POWER MOS TRANSISTORS TYPE IR F 5 4 0 IR F 5 4 0 F I V dss RDS(on) Id 100 V 100 V 0 .0 7 7 n 0 .0 7 7 £2 28 A 16 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED

IRFP 620

Abstract: transistor 623 ir 623 p bem diode IRFP P CHANNEL IRF 024
Contextual Info: Æ 7 S C S IRF 620/FI-621/FI IRF 622/FI-623/FI T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRF620 IRF620FI 200 V 200 V 0.8 !2 0.8 Q 5 A 4 A IRF621 IRF621FI 150 V 150 V 0.8 Q 0.8 S2 5 A 4 A IRF622 IRF622FI 200 V 200 V

STLT20FI

Abstract: STLT20
Contextual Info: STLT20 STLT19 Æ 7 SGS-THOMSON !10 g m i ( g r a [ * S N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS P R E LIM IN A R Y D A TA TYPE STLT20 STLT20FI STLT19 STLT19FI V DSS ^DS(on 60 60 50 50 0.15 n 0.15 fi 0.15 0 0.15 fi V V V V 15 10

RE528

Abstract: tp2n60fi TP2N60
Contextual Info: SGS-THOMSON STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RoS on V d ss S TP2N 60 S TP2N 60FI Id a 600 V 3 .5 600 V 3 .5 L I 2 .9 A 2 .2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

IRF640FI

Abstract: GC525
Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « IR F 6 4 0 IR F 6 4 0 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V IRF640 IRF640FI dss 200 V 200 V R DS on < 0.18 < 0.18 a a Id 18 A 10 A . TYPICAL RDs(on) = 0.145 Q . . AVALANCHE RUGGED TECHNOLOGY

stpr 10 cf

Abstract: stpr62oct
Contextual Info: 7/ SGS-THOMSON ra«M S»iD(S STPR61OCT/CF STPR 62OCT/CF ULTRA FAST RECOVERY RECTIFIER DIODES . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME . HIGH SURGE CURRENT CAPABILiTY ■ HIGH AVALANCHE ENERGY CAPABILITY A1 N- a2 ^ H- DESCRIPTION

VB408

Contextual Info: VB408 / VB408B VB408-1 / VB408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. TA R G ET DATA TYPE ^ V IN ,O U T h im VoUT 400 V 40 mA 1.25 to V |N-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25

TC1100C

Abstract: 380n
Contextual Info: rz T ^7# SGS-THOMSON M » iL iO T (S iO O S DTV64D/F (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE MA I N P R O D U C T S C H A R A C T E R I S T I C S I f (AV) 6A V rrm 1500V Vf (max) 1 . 4V F E A T UR E S AND B ENE FIT S • Very fast recovery diode allows HF H. deflection.

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

Rectifier GE 019-4

Abstract: STPR10
Contextual Info: STPR1020CT STPR1020CF ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY A1 A2 * A2 A1 DESCRIPTION Low cost dual center tap rectifier suited tor switch­

Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SGS-THOMSON ¡UÈTO « ¿ 5 7 STP5NA80 STP5NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP5NA80 STP5NA80FI dss 800 V 800 V R DS on Id < 2.4 a < 2.4 a 4.7 A 2.8 A • TYPICAL RDS(on) = 1 8 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S TP20N06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY