Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    ISB35 Search Results

    ISB35 Datasheets (113)

    STMicroelectronics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ISB35000
    		STMicroelectronics 0.5 MICRON HCMOS ARRAYS Original PDF 350.85KB 15
    ISB35000 Series
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.85KB 15
    ISB35083-CC44
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-CC84
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-GQFP208
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-GQFP304
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PGA300
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PGA64
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PowerQFP304
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PowerQFP80
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PQFP304
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-PQFP44
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-TQFP100
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35083-TQFP44
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35130
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.85KB 15
    ISB35130-CC44
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35130-CC84
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35130-GQFP208
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15
    ISB35130-GQFP304
    		STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF 350.86KB 15

    ISB35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISB12000

    Abstract: signal path designer
    Contextual Info: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		isb35000isb12000signal path designer PDF

    ISB35

    Contextual Info: . 4 7.62 ISB35 1 2 1 2 6 5 3 4 6.4 ISB35 5 Dimensions in mm 6 3 8.6 8.8 DESCRIPTION 7.62 The ISB35 is a 1-Form B solid state relay in a 6 pin DIL package. The ISB35 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode.


    Original     		isb3575kvrms100madc93074 PDF

    SGS-Thomson ball grid array

    Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
    Contextual Info: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		isb35000sgs-thomson ball grid arrayschematics power supply satellite receiverisb35083+6isb35130isb35166isb35208isb35279isb35389isb35484 PDF

    SGS-Thomson ball grid array

    Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver
    Contextual Info: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		cb35000sgs-thomson ball grid arrayisb350002m x 16 dpram+2signal path designerio out put buffer predriver PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual PDF

    transistor nd8

    Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
    Contextual Info: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.


    Original     		isb28000transistor nd8bt4rbt8c+6pmos nand gatemux21lan720but12but18but24 PDF

    IS210

    Abstract: IS211 IS214 IS215 IS216 IS216D ISPA06 ISA40
    Contextual Info: Optically Coupled MOSFET Relays Isocom offers a range of MOSFET relays with a miniature small outline package through to a dual channel 8 pin DIP package. The relays can be used in either an AC or DC mode and due to the MOSFET technology offer very high reliability. Several versions are available offering: low


    Original     		isdb35ispd401500vrmsis210+7is211is214is215is216is216dispa06isa40 PDF

    CB12000

    Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
    Contextual Info: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)


    Original     		cb22000cb12000cd 4847bt8c+6dc to ac inverter schematicld3pfd11sfd3sbut12but18 PDF

    7939-2

    Abstract: signal path designer CB35000 Series
    Contextual Info: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		cb350007939-2signal path designercb35000 series PDF

    DPRAM

    Abstract: 256K DPRAM ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484 ISB35666
    Contextual Info: DIGITAL SEMICUSTOM CIRCUITS SEA OF GATES - STRUCTURED ARRAYS ISB 35000 SERIES 0.5 micron, triple level metal HCMOS Technology. Typical delay 0.21ns for 2-input NAND gate GENERAL FEATURES • ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance


    Original     		dpram256k dpramisb35083isb35130+6isb35166isb35208isb35279isb35389isb35484isb35666 PDF

    moc3041 dimmer

    Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
    Contextual Info: Welcome to the Isocom Components information booklet! 4 Pin DIL & SMD Optocouplers 6 Pin DIL & SMD Optocouplers 8 Pin DIL & SMD Optocouplers 16 Pin DIL & SMD Optocouplers 8 & 16 Pin Symmetrical Terminal Configuration DIL & SMD Optocouplers Special Purpose 6 Pin DIL & SMD Optocouplers Triac & Schmitt Trigger


    Original     		unbeata140paa150laa100laa110+16laa126laa127laa120laa125lcb110lcb111moc3041 dimmertlp521 equivalentapplication silicon bilateral switch light dimmerqtc 4n35optocouplers qtcmoc3023 dimmermoc3011 optocouplersmd transistor b35moc3042kaqy212eh PDF