IS61C64 Search Results

Contextual Info: ISSI - 4-i IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12,15, 20, 25 ns T he IS S I IS61C64AH is a ve ry high-speed, low power, 8 192-w ord by 8-bit static RAM. It is fabricated using FSSI's high-perform ance CM O S technology. T his highly reliable pro­

Contextual Info: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­

b0821

Abstract: asic 1605
Contextual Info: ISSI IS61C64B 8K x 8 HIGH-SPEED CMOS STATIC RAM AUGUST 1997 FEATURES DESCRIPTION • High-speed access time: 10, 12, and 15 ns The IS S I IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. This highly reliable pro­

Contextual Info: IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSI's • High-speed access time: 15, 20, 25 ns • Automatic power-down when chip is

IS61C6416

Contextual Info: ISSI IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 jjA/V (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

tba 480

Abstract: IS61C6416
Contextual Info: ISSI ISSI IS61C6416 IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES ® ADVANCE INFORMATION APRIL 1996 DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static • High-speed access time: 12, 15, 20 ns • CMOS low power operation — 450 mW typical operating

IS61C64AL

Abstract: 61C64AL IS61C64AL-10JLI IS61C64AL-10JI IS61C64AL-10TI IS61C64AL-10TLI is61c64al10jli
Contextual Info: ISSI IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES OCTOBER 2006 DESCRIPTION The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's • High-speed access time: 10 ns • CMOS low power operation

Contextual Info: I S 6 1 C 6 4 1 ISSI 6 64K x 16 HIGH-SPEED CMOS STATIC RAM ADVA^ '^ F° iTI0N FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns The IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated

IS61C6416

Contextual Info: / I S 6 1 C 6 4 1 v e / 6 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S I IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated

IS61C64AH-12J

Abstract: IS61C64AH-15N
Contextual Info: I S 6 1 C 6 4 A ISSI H 8K x 8 HIGH-SPEED CMOS STATIC RAM OCTOBER 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The IS S I IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. This highly reliable pro­

Contextual Info: ISSI IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 [l\N (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

IS61C64AH-15J

Contextual Info: IS61C64AH ISSI 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable pro­

IS61C64AH

Abstract: TQGM404 s61c64
Contextual Info: ISSI 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable pro­ cess coupled with innovative circuit design techniques, yields

IS61C6416-15TI

Abstract: SR012 IS61C6416
Contextual Info: IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 1650 mW max @ -10ns Cycle — 55 µW (max) CMOS Standby • TTL compatible interface levels • Single 5V ± 10% power supply

IS61C64AL

Abstract: IS61C64AL-10JI IS61C64AL-10JLI IS61C64AL-10TI IS61C64AL-10TLI
Contextual Info: ISSI IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES MARCH 2006 DESCRIPTION The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's • High-speed access time: 10 ns • CMOS low power operation

IS61C6416

Abstract: TBA 480
Contextual Info: ISSI ISSI IS61C6416 IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

61c64

Abstract: IS61C64-S20W IS61C64-S20N IS61C64 IS61C64-S20P
Contextual Info: ISSI IS61C64_ U 8K X 8 HIGH SPEED CMOS STATIC RAM FEATURES • • • • • • • • • • Very High Speed - 20, 25, 30 ns Max. Fast output enable (tOE) for cache applications Automatic power-down when chip is deselected CMOS Low Power Operation

IS61C64AH-15N

Abstract: IS61C64AH IS61C64AH-12J IS61C64AH-12N IS61C64AH-15J IS61C64AH-20J IS61C64AH-20N IS61C64AH-25N
Contextual Info: ISSI ISSI IS61C64AH IS61C64AH ® 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15, 20, 25 ns • Automatic power-down when chip is deselected • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby

IS61C256AH

Contextual Info: Org. 8K x 8 32K x 8 32K x 16 64K x 8 64K x 16 64K x 24 128K x 8 128K x 16 Part No. IS61C64AH IS61C64B IS61C256AH IS61LV256 1 IS62C256 IS62LV256(1) IS62LV256L(1) IS61C3216 IS61LV3216(1) IS61LV3216L(1) IS61C512 IS61C6416 IS61LV6416(1) IS61LV6424(1) IS61C1024

Contextual Info: IS 6 1 C 6 4 A H 8K x 8 HIGH-SPEED CMOS STATIC RAM m t OCTOBER 1997 FEATURES DESCRIPTION • The IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using s high-performance CMOS technology. This highly reliable pro­

Contextual Info: ISSI IS61C64B 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, and 15 ns • Automatic power-down when chip is deselected • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels

Contextual Info: IS 6 1 C 6 4 A H 8K x 8 HIGH-SPEED CMOS STATIC RAM MAY 1999 FEATURES DESCRIPTION • The IS S I IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­

IS61C64B

Abstract: IS61C64B-10J IS61C64B-10N IS61C64B-10T IS61C64B-12J IS61C64B-12N IS61C64B-12T IS61C64B-15J IS61C64B-15N
Contextual Info: ISSI IS61C64B 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, and 15 ns • Automatic power-down when chip is deselected • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels