IRG4BC30FPBF Search Results
IRG4BC30FPBF Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRG4BC30FPBF | International Rectifier | Original | 167.64KB | 8 | |||
| IRG4BC30FPBF | International Rectifier | 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; Similar to IRG4BC30F with Lead Free Packaging | Original | 171.85KB | 9 |
IRG4BC30FPBF Price and Stock
Infineon Technologies AG IRG4BC30FPBF (5430147)600V FAST 1-8 KHZ DISCRETE IGBT IN A TO-220AB PACKAGE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC30FPBF (5430147) | Bulk | 1 |
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Get Quote | ||||||
International Rectifier IRG4BC30FPBFFAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRG4BC30FPBF | 250 |
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Get Quote | |||||||
IRG4BC30FPBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
-95651airg4bc30fpbfo-220ab | |
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Contextual Info: PD -95651A IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
-95651airg4bc30fpbfo-220abtc4bc30fpbf | |
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Contextual Info: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
irg4bc30fpbfo-220ab | |
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Contextual Info: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
irg4bc30fpbfo-220abtc037 | |
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Contextual Info: PD -95651 IRG4BC30FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than |
Original |
irg4bc30fpbfo-220ab | |
4410 SO-8
Abstract: irf7389pbf IRF7343TRPBF IRG4PH30KPBF IRG4PC40FD IRFP4232PBF IRG4PC40UPBF IRG4PH50SPBF 247AA IRFR220NTRPBF
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Original |
irf3315pbfirf3415pbfirf3415spbfirfb23n15dpbf+16 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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Original |
element-14f155-6af155-10af165-15a+11 | |
IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
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Original |
100mt160papbf100mt160pa100mt160pbpbfiru1239sc+9 |