IRFT 200 Search Results

irft 200

Abstract: IRFT002 irfc9024 HEXFET Power MOSFET P-Channel IRFT004 IRFT001 irfc9
Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4055452 QG1Q44B 3 ■ Preliminary Data Sheet No. PD-S.021B -3*?-a 7 International H>! Rectifier HEXFET Power Module IRFT Series 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

IRFT002

Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

Contextual Info: T O S H IB A TEN T A TIV E HN9C05FT T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L PLA N A R T Y PE H M Q f IRFT V H F - U H F B A N D L O W NO ISE A M P L IF IE R A PPLIC A TIO N S U n it in mm TWO devices are b u ilt in to th e super-thin and ultra super m ini

TSS1H44

Abstract: TSS1D44 SS1J4
Contextual Info: 9 0 9 7 2 5 0 TOSHIBA D IS C R E T E /O P T O 39G 02 373 D 7~ £ S - / 3 SSR (ZERO-CROSS TYPE) 3e] TOSHIBA -CDISCRETE/OPTO} TSS1J44 dF I tO ^SO 600V 1A O CHARACTERISTIC TSS1D44 Repetitive Peak TSS1G44 Off-state Voltage TSS1H44 T SS1J44 RMS On-state Current

A271

Abstract: TS902C2 ts902c UAX-11
Contextual Info: T S 9 0 2 C 2 ioa O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER .4.5±at 1.32 I 4 M'S4 T.7 • f t f i : Features • SB X tt » A JEDEC EIAJ Surface m ount device • 1&VF mm&m. Low V [.■ C o n n e c tio n D iagram Super high speed sw itching.

Contextual Info: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET

IRFTS9342TRPBF

Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Contextual Info: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET

SOT890-1

Contextual Info: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

SOD123 ZL marking

Contextual Info: WILLAS FM120-M+ 2SB1260 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers TRANSISTOR PNP

diodes for bridge rectifier

Contextual Info: © fc m Power Interface Products HEXFET POWER MODULES Standard and Custom International Rectifier’s Power Interface Products Group offers state of the art packaging of complete power functions for a wide range of applications. These multi-chip modules, designed to reduce the

Contextual Info: B U R R ^B R O W N 4 4 2 3 I ——-I PRECISION QUADRATURE OSCILLATOR CO CM FEATURES DESCRIPTION • SINE AND COSINE OUTPUTS T he M odel 4423 is a precision q u ad ratu re oscillator. It has tw o o u tp u ts 90 degrees o u t o f phase w ith each other, th u s providing sine an d cosine wave outputs

Contextual Info: ELECTRICAL SPECIFICATIONS EPOXY CONFORMAL COATED MODEL MO. IRF-1 INDUCTORS Ttost Ind. MODELS IRF-t and IRF-3 Uniform Roll Coated FEATURES • Superior electrical specifications High Q & S R F , Low D C resistance, High rated D C current • Available in bulk, ammo and reel pack per E IA RS-296

1N5327

Abstract: 1N532 n 340 ad LT 83 ZENER 1N5j
Contextual Info: 1N6309 thru 1N6355 Microsemi Corp. SA S T A A S A , C A J-'or more information cali 7 ]4 | 9 7 9 -X 2 2 0 500 mW Glass Zener Diodes FEATURES • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • MICROMINIATURE PACKAGE • TRIPLE LAYER PASSIVATION • NIETALLURGICALLY BONDED (ABOVE 6.2 VOLTS

wmm p8

Abstract: t930 AH20 ESAC92M-02
Contextual Info: E S A C 9 2 M - 2 i o a : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features • fo m en t-? insulated package by fully molding. Low V]. wc Connection Diagram Super high speed switching. High reliability by planer design, • : Applications

TS902C2

Contextual Info: T S 9 0 2 C 2 ioa K : O utlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER Features Surface m ount device •1&V K Low V [.• C o n n e c tio n D iagram Super high speed sw itching. • ttffiU Ji& A fl *St4 H igh reliability by planer design r ^

Contextual Info: HIP5060 < X Ì HARRIS S E M I C O N D U C T O R Power Control 1C Single Chip Power Supply Features Description • Single Chip Current Mode Control 1C The HIP5060 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the

74 HTC 08

Abstract: 74 HTC 00 D786 74 TTL series
Contextual Info: I L C »ATA DEVICE CORP L.D Î>Ê| MbTflTbl 0 0 0 3 ^ 5 3 j p p 7 3 -^ 5“ BQ THA-05203 ILC DATA DEVICE CORPORATION HIGH SPEED TRACK/HOLD HYBRID •150 nsec Acquisition Time ± 0.005% Linearity Error . FEATURES • 150 NSEC ACQUISITION TIME DESCRIPTION The THA-05203 is a high speed, high

r9020

Abstract: 1RFR9020 1RFU9020 Diodo t b 9 g DIODO 42 40 028Q irfr9020 irf r9020 T372S FAG 50 diode
Contextual Info: international RECTIFIER " IN T E R N A T IO N A L r e c t i f i e r IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET* TRANSISTORS P -C H A N N E L -5 0 Volt, 0.20 Ohm HEXFET The HEXFET* technology to the keytoim em ettonel Rectaer'a edvanoed lloe o f power F/OSF6T traneialora. Tbo eWcient

Contextual Info: FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVERS IDT54/74FCT16245T/AT/CT IDT54/74FCT162245T/AT/CT Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • Common features: - 0.5 MICRON CEMOS Technology - High-speed, low-power CEMOS™ replacement for ABT functions

Contextual Info: MOS M n f î - Ï Ü B & 'W MOS Field Effect Power Transistor 2SK1491 N MOS FET i i f 2SK1491 ! i , N - < , X -i -y f- > £ f l M OS F E T T * 9 , ¡ t î J U 'i & X 4 -y -f > m m VnM , : mm DC- D C 3 > ' < — ? iZ - M iiÊ 'V - i'o ft & o Vdss = 250 V, I D DC)= ±25 A

mPD16305

Abstract: TFK 082 PD16305GF-3L9 PD16305 uPD16305 228 PH PDI6305
Contextual Info: mos M O S In teg rated C ircuit w P D I 6 3 5 40 b' y h AC-PDP ¥=7 ^ ' < ^PD16305 ä, Ü ï Î l f C M O S y n - t X ÿ f f l u / j , ito 4 0 h '7 M M - / 7 ' 7 7 A C 7 '7 X - 7 - t '^ 7 V 'l’ ^ w u K 7 A '< (P D P ) f (Sift, fc’ J: îAiÜSÎÆ CMOS co K 7 -í

fci dh 22

Abstract: NJU9207F NJU9207 NJU9208 QFP80
Contextual Info: V£ Z X s s d Ä B Z I 0 2 I W 0 D 0 H 3 0 0 / d d d H a y H V V I l 1 1 1 I I I IJ- X 0 I a a a V V V m a ¿ ¿ I o 0 ß Q'S 9 rt n * s n o . ' d o ii ii -W w U ou U s y 2> Nc 5! 2o o: ü. 0103SI1Z n n n n n n n n n nnn nnnn nnn nnn nn n zz zz IZ OZ 61 81 ¿ I 91 SI t i £1 Zl U O I 6 8 ¿ 9 S t £ 3 T

MIL-STD-1050

Abstract: 200151
Contextual Info: M ic r o w a v e t e c h n o l o g y PERFORMANCE GRADING AND SCREENING OPTIONS FOR MwT GaAs FETS PERFORMANCE GRADINO Most MwT GaAs FET devices are available in two performance grades. This allows the circuit designer to match the RF performance required to the application in the most economical way. These grades are established using

it 6502e

Abstract: 6101E 6102E 6101-E
Contextual Info: TFDU6101E/TFDS6501E/TFDT6501E TFDU6102E/TFDS6502E/TFDT6502E Vishay Telefunken Fast Infrared Transceiver Module Family FIR, 4 Mbit/s for 2.6 V to 5.5 V Operation MEMBERI IrDA I Description T he T FD U 6101E , T FD S 6501E , T FD T 6501E , T FD U 6102E , T FD S 6502E , T FD T 6502E are a fam ily