IRFS350 Search Results

IRFS350A

Contextual Info: IRFS350A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRFS350

Abstract: sec irfs350
Contextual Info: $GYDQFHG 3RZHU 026 7 IRFS350 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: IRFS350A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRFS350A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFS350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

Contextual Info: IRFS350A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technofogy Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ Low Rds(0N) : 0 254 Q. (Typ.)

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

IRFS351

Abstract: 250M IRFS350
Contextual Info: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V

IRFS350

Contextual Info: IRFS350 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P F ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

AN-994

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

sec irfs350

Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

High Efficiency Synchronous Rectification in SMPS

Abstract: AN-994
Contextual Info: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

Contextual Info: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.)

19-AF

Abstract: AN-994
Contextual Info: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

SOT-224

Abstract: IRF540NPBF IRF1010E IRFZ44NPBF IRLL024NPBF IRFL014NTRPBF IRF7478T irfp4710 sot224 irfp044npbf
Contextual Info: 1966-2012:QuarkCatalogTempNew 9/18/12 3:29 PM Page 1966 25 TEST & MEASUREMENT Power MOSFETs Continued INTERCONNECT Power MOSFETs N Channel, 55 Volt VDSS RoHS ASSEMBLY SEMICONDUCTORS OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES TO-220AB D2-PAK INDEX

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1