|
Contextual Info: IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
irfw710birfi710birfi710airfi710btu+1o-262
|
PDF
|
IRFI710B
Abstract: IRFW710B
Contextual Info: IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
irfw710birfi710b |
PDF
|
IRFI710B
Abstract: IRFW710B
Contextual Info: IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
irfw710birfi710b |
PDF
|
SSI5N60A
Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Contextual Info: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -
|
Original
|
o-262isl9n303as3huf75345s3huf75333s3+8fqi85n06fqi65n06fqi55n06fqi50n06fqi30n06ssi5n60afqi13n06fqi20n06
|
PDF
|
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
|
Original
|
irf830airf830bpower247tmsss4n60a+9irfs634airfs630assp4n60airf640bsss7n60airfu210assp7n60airf634birf840a china
|
PDF
|
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
|
Original
|
sc70-6ot-23fdr8321lfdr8521l+13fdfs2p106afdfs2p103fdfs2p102ssp6n60airf650irf540 mosfet with maximum vds 12vssp2n60bsss7n60bssr2955irfs630assp4n60asss3n90airf634a
|
PDF
|
