IRFF912 Search Results

Contextual Info: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated

IRFF9120

Contextual Info: IRFF9120 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

MOSFET

Abstract: 2N6845
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)

JANTX2N6845

Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

IRF024

Abstract: IRF034 IRF045 IRFF9030 IRFF9010 IRFF9020 IRFF9111 IRFF9112 IRFF9113 IRFF9121
Contextual Info: INTERNATIONAL RECTIFIER BbE D MflSSMSa GDiaOTti ê International is ] R ectifier H EXFET Hermetic Package r - 3 c?~/'3 TO-39 N-Channel Part Number V q s Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133

2N6844

Abstract: 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022
Contextual Info: HERMETIC PACKAGE HEXFETs — INTERNATIONAL RECTIFIER SbE D • INTERNATIONAL. RECTIFIER 4ÛSS4S2 DOlOSbO 7 ■ ll&R T*-3 ^ - 0 3 ~ TO-39 Package P-CHANNEL Types IRFF9030* IRFF9032* IRFF9020“ IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6848 IRFF9121

IRFF9120

Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

IRF024

Abstract: 2N6845 IRF035 33MIL
Contextual Info: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80

IRFF9120

Abstract: 2n6845 TO-205AF Package
Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

rectifier diode 1-35 LA V6

Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
Contextual Info: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

tc 9123

Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
Contextual Info: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

IRFF9120

Contextual Info: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRFF9120 Semiconductor Data Sheet June 1999 4A, 100 V, 0.60 Ohm, P-Channel Power MOSFET • 4 A ,1 0 0 V • r DS ON = 0 .6 0 ß • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and