IRF9630 MOSFET Search Results

irf9630

Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
Contextual Info: IRF9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

IRF9630

Abstract: MOSFET IRF9630 IRF9631
Contextual Info: P-CHANNEL POWER MOSFETS IRF9630/9631 FEATURES • Lower R d s o n •Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRF9630

Abstract: MOSFET IRF9630
Contextual Info: PD-9.352F International S S Rectifier IRF9630 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V = 0-80Q R DS on lD = -6.5A Description

Contextual Info: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

irf9630

Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631
Contextual Info: P-CHANNEL POWER MOSFETS IRF9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

irf9630

Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Contextual Info: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

irf9630

Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633
Contextual Info: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics

Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9630

Abstract: IRF9630PBF SiHF9630 SiHF9630-E3
Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

irf9630

Abstract: MOSFET IRF9630
Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

MOSFET IRF9630

Abstract: IRF 1630 IRF9630 IRF9631 IRP9 IRF9632 IRFS632 irf98 transistor IRF 630 IRF9633
Contextual Info: Rugged Power M O SFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -2 0 0 V fDs on = 0.8 f i and 1.2 0 TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated

IRF9630

Abstract: SiHF9630 SiHF9630-E3
Contextual Info: IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 200 RDS(on) (Max.) (Ω) VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9630

Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Contextual Info: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified

IRF9630

Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334
Contextual Info: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of

irf9630

Contextual Info: IRF9630/9631/9632/9633 IRFP9230/9231 /9232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n > Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate ceil structure Lower input capacitance

diode 9232

Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Contextual Info: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on

1RF9630

Abstract: Diode SMD SJ 65a smd A9A IRF9630 ts65a Diode SMD SJ 05 rd152 A9A smd S65A
Contextual Info: PD-9.352F International XORRectifier IRF9630 HEXFET Pow er M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - "200V ^DS on = 0 -8 0 Q iD = -6.5A