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RF1S9630SM9A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RF1S9630SM9A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	43.45KB	1

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ITS Electronics Inc RF1S9630SM9A
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RF1S9630SM9A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRF9630, RF1S9630SM Semiconductor April 1999 Data Sheet -6.5A, -200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	IRF9630, RF1S9630SM -200V, -200V	PDF
IRF9630 Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334 Contextual Info: IRF9630, RF1S9630SM Data Sheet Title F96 1S9 0SM bt A, 0V, 00 m, 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified	Original	IRF9630, RF1S9630SM TA17512. TB334 IRF9630 O-220AB O-263AB IRF9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334	PDF
IRF9630 Abstract: 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334 Contextual Info: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of	Original	IRF9630, RF1S9630SM TA17512. IRF9630 5a,200v power diode MOSFET IRF9630 Datasheet RF1S9630 RF1S9630SM RF1S9630SM9A TB334	PDF
irf9630 Abstract: IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633 Contextual Info: HARFRIS S E M I C O N D U C T O R IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs May 1998 Description Features -5.5A and -6.5A, -150V and -200V Linear Transfer Characteristics	OCR Scan	IRF9630, IRF9631, IRF9632, IRF9633, RF1S9630, RF1S9630SM -150V -200V, TA17512. RF9630, irf9630 IRF9631 IRF9632 RF1S9630 MOSFET IRF9630 IRF9633	PDF
irf9630 Abstract: RF1S9630 RF1S9630SM RF1S9630SM9A TB334 Contextual Info: IRF9630, RF1S9630SM Data Sheet 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRF9630, RF1S9630SM TA17512. irf9630 RF1S9630 RF1S9630SM RF1S9630SM9A TB334	PDF