IRF9130 MOSFET Search Results

IRF9130

Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

irf9130

Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

IRF9130

Abstract: IRF9130 mosfet 5676 gate drive for mosfet irf9130
Contextual Info: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

IRF9130

Abstract: IRF9130 mosfet
Contextual Info: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

Contextual Info: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF9130

Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
Contextual Info: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: Government and Space llltemationsl HEXFET Power MOSFETs liQ R lR e c t if ie r Hermetic Package P-Channel Part Number BVq s s V IRF9130 -100 RDS(on) (Ohms) 0.3 Id @ Tr = 25°C Id @ TC = 100°C RthJC Max. (K/W) c (*i (A) -11 -7.0 1.67 Outline (W) Number (1)

1RFP9240

Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
Contextual Info: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number

IRF9130

Abstract: IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132
Contextual Info: H E 0 I MâS 54 52 000^214 5 | Data Sheet No. PD-9.318E INTERNATIONAL RECTIFIER « in t e r n a t io n a l r e c t i f i e r I«R HEXFET TRANSISTORS IRF91 3 0 IRF9131 IRFS1 3 2 Channel IRFS1 3 3 -100 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International Rectifier’s

IRF9130 mosfet

Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
Contextual Info: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated

IRF9131

Abstract: 1RF9131 92CS-43298 1RF9130
Contextual Info: H a r r i s I R F I R F 9 9 1 1 3 3 2 , , I R F 9 1 3 1 I R F 9 3 1 3 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 9 9 4 F e a tu re s Package T 0 -2 0 4 A A BOTTOM VIEW • -10 A and -12A , -8 0 V and -100V • rDS ON = 0.30Î1 and 0 .4 0 fl

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851

FT0013A

Abstract: FT001 IRF9130 mosfet IRF9130 SFX9130J
Contextual Info: SFX9130J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mΩ P-Channel MOSFET TO-257 Features: • •

IRF9130

Abstract: SFX9130J IRF9130 mosfet
Contextual Info: SFX9130J Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 10 AMP /100 Volts 300 mO P-Channel MOSFET TO-257 Note 1: maximum current limited by package

irf630 irf640

Abstract: IRF250N Irfp250 irfp460 IRF6404 MOSFET IRF460 irf460 to-247 FET IRFP450 IRF510 mosfet irf640 MOSFET IRF460 TO 247 MOSFET IRF
Contextual Info: МОЩНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ Power MOSFET HARRIS является мировым лидером в производстве Power MOSFET. Выпускаются как n канальные, так и p канальные транзисторы, но первые используются чаще и имеют больший

IRF9130 mosfet

Abstract: IRF9130 SFF9230M SFF9230Z r535
Contextual Info: fe r c iftll PHtL,MINABY SFF9230M SFF9230Z SOLID STATE DEVICES, INC //// 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -6.5 AMP -200 VOLTS 0.80Q P-CHANNEL POWER MOSFET | Designer’s Data Sheet FEATURES: •

Contextual Info: SFF9130M SFF9130Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4470 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com -11 AMP P-Channel POWER MOSFET DESIGNER’S DATA SHEET 1/ Part Number / Ordering Information

555 off delay

Abstract: IRF9130 mosfet IRF9130 SFF9130M SFF9130Z 1270L
Contextual Info: PRELIMINARY §m î SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -11 AMP 100 VOLTS 0 .3 0 0 P-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

FT0045A

Contextual Info: SSDI is proud to introduce four new radiation tolerant MOSFET products. All of these new devices feature rugged trench technology, low ON-resistance, and SEU / SEGR resistance to LET 38. TX, TXV, and S-level screening is available and based on MIL-PRF-19500. Screening flows are available on request. For more information or to request

f9530

Abstract: IRF9530 L 9132 diode 9532 IRF9530 mosfet IRF9530* p-channel power MOSFET 9532 mosfet IR mosfets OA 91 diode ir 9133
Contextual Info: IRF9530/9531 /9532Z9533 IRFP9130/9131 /9132/9133 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area

IRF9530 Harris

Contextual Info: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)