IRF530 DATASHEET Search Results

IRF530

Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

irf530

Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

IRF530

Abstract: tr irf530
Contextual Info: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE

RF1S540

Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530 mosfet

Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530

Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Contextual Info: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

cds photo diode

Abstract: IRF530 marking
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

91019-04

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

Contextual Info: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

TT220

Abstract: transistor IRF 531 IRF 530 transistor 531
Contextual Info: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI

IRF 260 N

Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
Contextual Info: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A

IRF 260 N

Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
Contextual Info: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI

IRF530

Contextual Info: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing

Contextual Info: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components 10V to 90V Input Voltage Range

IRF530 application

Abstract: hv301 hv311 HV311 HV301 HV301LG HV311LG IRF530 dc to dc converter 48v to 12v 10a diagram
Contextual Info: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing

IRF530 application

Abstract: pwm 555 timer mosfet driver HV301 HV311 IRF530 circuit diagram of PWM USING IC 555 TIMER transistor irf530
Contextual Info: HV301/HV311 HV301 HV311 Demo Kit Available Hotswap, Controllers with Circuit Breaker Negative Supply Rail Features General Description ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ The Supertex HV301 and HV311 Hotswap Controllers provide control of power supply connection during insertion of cards or

A0926

Abstract: 10v ZENER DIODE
Contextual Info: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ! ! ! ! ! ! ! ! ! ! ! ! ! ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing

Contextual Info: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components ±10V to ±90V Input Voltage Range

Contextual Info: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail d e d n e m m o ! c s e n R g i t s o e N D w e N r Fo Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ? 10V to ? 90V Operation Built-in “normally on” turn-on clamp eliminates components