IR PHOTODETECTORS Search Results

ir led PHOTODIODE

Abstract: ir sensor for object detection using led IR object DETECTOR IR Sensor transmitter and receiver diode ir sensor simple circuit ir photodiode amplifier ir proximity sensor IR photodiode sensor ir transmitter receiver sensors abstract of Touch screen sensor
Contextual Info: Maxim > App Notes > Amplifier and Comparator Circuits Keywords: high-speed op amps, IR proximity sensing, bandpass filters, IR LEDs, IR photodetectors Oct 15, 2009 APPLICATION NOTE 4622 High-Speed Op Amp Enables Infrared IR Proximity Sensing By: Arpit Mehta

IR Emitters

Contextual Info: SIEMENS Si-Foto-Detektoren, IR-Lumineszenzdioden, Lichtschranken Si-Photodetectors, IR Emitters, Light Barriers Data Book 03.96

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

phototransistor ultraviolet

Abstract: foto sensor
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE UND IR-LUMINESZENZDIODEN SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SI-FOTODETEKTOREN, OPTISCHE UND IR-LUMINESZENZDIODEN SENSOREN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS 1. Foto IC für Fernsteuerung

sfh 309 fr

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P • GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren • Hohe Zuverlässigkeit • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • Hohe Impulsbelastbarkeit

cdte

Abstract: Photoconductor 86X10
Contextual Info: PCI-M Series IR Photoconductors FAST 2-6 µm IR PHOTOCONDUCTORS ROOM TEMPERATURE, OPTICALLY IMMERSED FEATURES ambient temperature operation ∗spectral range of 2-6 µm ∗D*=108-1011 cmHz11/W fast response time low bias power requirements wide dynamic range

Q62703-Q516

Abstract: diode SR 315
Contextual Info: SFH 485 P SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren

PC-L-2TE

Abstract: photoconductor ir photodetector
Contextual Info: PC-L-2TE Series CO2 Laser Detector IR Photoconductor 2-12 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED FEATURES • • • • • • D* 10.6 µm >1x108cmHz1/2/W <10 nanosecond time constant high output signal wide dynamic range compact, rugged and reliable

UM 7108 F

Abstract: photoconductor cdznte 2TE12 IR photodetectors AN 7108
Contextual Info: PCI-2TE Series IR Photoconductor 2-12µm Spectrally Tailored IR Photoconductors Themoelectrically Cooled, Optically Immersed FEATURES • • • • • • high performance in the 2-12µm range without LN2-cooling! fast response convenient to use wide dynamic range

Contextual Info: SIEM ENS GaAIAs-IR-Lummeszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale Features • G aA IA s-IR -Lum ineszenzdiode, hergestellt im Schm elzepitaxieverfahren • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • G ute spektrale A npassung an

Q62703-Q517

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Cathode SFH 487 P GEX06308 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P 4.0 " l 3.6 p -& Ï0.4 Cathode G EX06308 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt

Contextual Info: SIEMENS SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkm ale Features • • • • • • GaAIAs-IR-Lum ineszenzdiode, hergestellt

PHOTODIODE PD 20

Abstract: photodiode responsivity 1550nm 2 photodetector 1300nm photodetector PIN 1300nm PD-1375-ir Photodetector 1550nm pin photodetector 1300nm sm 1040 InGaAs Photodiode 1550nm photodiode responsivity 1550nm with FC connector
Contextual Info: 1300 / 1550 nm PD-1375-ir Description: PD-1375-ir – is a series of photodetector modules for spectral range of 1300/1550nm based on InGaAs PIN photodiode. Hermetically sealed modules are performed in standard receptacle package with built-in collimating ball lens and are used for coupling with «FC/PC» connectorized

tic 41

Contextual Info: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Inhaltsverzeichnis Fotodetektoren Table of Contents for Photodetectors Seite Page 1. Integrierter Empfänger für Fernbedienungen 1. Integrated Remote Control Receiver

4 Pin SMD Hall sensors

Abstract: optokoppler Cross Reference vergleichsliste magnetoresistor "vergleichsliste" hall sensor 4-pin dIP MRS DIP Silizium-Drucksensoren ir laserdioden hall sensor 4-pin
Contextual Info: Inhaltsverzeichnis Contents Symbole und Begriffe Symbols and Terms Seite Page 6 Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Typenübersicht; Abbildungen Si-Fotodetektoren Inhaltsverzeichnis Summary of Types; photos (Silicon photodetectors)

tc 4516

Abstract: 4516-U sfh4516
Contextual Info: 2011-03-14 GaAs Infrared Emitters GaAs-IR-Lumineszenzdioden Version 1.0 SFH 4516 Features: • • • • Besondere Merkmale: Good spectral match with silicon photodetectors UL version available High reliability Very highly efficient GaAs-LED • • •

diode 9306

Abstract: FA 4301 SFH 9500 SFH 5110 bpx 48 BP104 SFH 4552 SFH9240 GEOY6972 GPXY6992
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Maßbilder in mm inch Outline Drawings dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) SFH 5110, SFH 5111 Figure 2 6.1 (0.240) 5.9 (0.232)

IF20

Abstract: 71N2 SLD-70BG2 planar photodiodes Silonex SLD-67HF2A
Contextual Info: Silonex Planar Photodiodes, IREDs and Arrays Visit SilonexÕs Website at www.silonex.com Planar Photodiodes Planar, passivated silicon photodetectors designed to operate either in photovoltaic mode or in a reverse-bias mode. Available with IR and BG filters for spectral

Contextual Info: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available

Contextual Info: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available

SFH4512

Abstract: 4512
Contextual Info: 2011-03-14 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 4512 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAs-LED 5mm plastic package Peak Wavelength 950nm Spectral match with silicon photodetectors High radiant intensity

fototransistor BPW 39

Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Contextual Info: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode

IEC 62471 osram

Contextual Info: 2007-04-02 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 487 P Features: • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors