IR 80SQ045 Search Results

mbrf1060ctl

Contextual Info: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1

BTQ100

Abstract: BTQ080 25CT0040 ir 80sQ045 MBR745 ir 50sq080 RC145 c1161 444CNQ 10MQ090
Contextual Info: Schottky Rectifiers Products From IR Surface Mount •F AV @ Tc Part Number 10MQ040 10MQ060 10MQ090 VRRM 00 40 60 90 (A) <°c> 1.1 0.77 0.77 92 110 110 0.51 0.57 0.65 - - 50 7.5 5.0 - - 50 15MQ040 40 1.7 - 0.55 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F

1n5817 SOD-123

Abstract: mur860 diode Diode MUR1560 MBR2
Contextual Info: Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers IO Amps VRRM (Volts) VF @ Rated IO and TC = 25°C Volts (Max) IR @ Rated VRRM mAmps (Max) MBR0520LT1, T3 0.5 20 0.33 0.25 SOD-123 MBR120LSFT1, T3 1.0 20 0.45 0.4 SOD−123 Flat Lead MBR120VLSFT1, T3

121NQ035

Contextual Info: Other Products From IR Schottky Rectifiers Surface Mount lF AV @ TC VRRM (V) (A) (°C) VFM @ <FM (D (V) 10MQ040 10MQ060 10MQ090 40 60 90 1.1 0 77 0.77 92 110 110 0.51 0.57 0.65 15MQ040 40 1.7 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F 30 40 50 60 90

smd diode f54

Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040

Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

80SQ045N

Abstract: 80SQ045NRL MBR845
Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

80SQ045NG

Abstract: 80SQ 80SQ045N 80SQ045NRL 80SQ045NRLG MBR845
Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

80SQ045N

Abstract: 80SQ045NRL MBR845
Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IEC61730-2

Abstract: powerdi5 IEC61215 SBR10U45SP5 solar panels IEC61730 solar panel blocking diode do-201 pv bypass diode SBR1045 SBR1045SP5
Contextual Info: New Product Announcement April 2008 Diodes Announces High Efficiency SBR Rectifiers for Solar Panel Market PowerDI®5 Physical Dimensions: 6.5mm x 4.0mm x 1.1mm SBR10U45SP5 and SBR1045SP5 – SBR Bypass Diodes in PowerDI-5 The new SBR® diodes are the industry's first bypass diodes specifically designed in accordance with the high

40HF

Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

STP4119

Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
Contextual Info: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices

schottky diodes 16A

Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460
Contextual Info: Bulletin PD-2.047 rev. E 12/01 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units IF AV Rectangular 8 A 35 to 45 V IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C 0.44 V TJ range

ir 80sQ045

Abstract: 40HF 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

C18 ph zener

Abstract: LM26761 2676T-5 2676T-3 2676T-12 2676T-1
Contextual Info: tß Semiconductor S IM P LE S W IT C H E R High E ffic ie n c y 3A S te p -D o w n SIMPLE LM 2 6 7 6 LM2676 May 1998 National Voltage R eg u la to r The SIMPLE SWITCHER concept provides tor a complete design using a minimum number ol external components. A

80SQ045

Abstract: IRFP460 80SQ 80SQ030 80SQ035 80SQ040 ir 80sq040 7380a
Contextual Info: Bulletin PD-2.047 rev. F 05/02 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 to 45 V IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C 0.44 V TJ range

ir 80sq040

Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

vishay 1N4007 DO-214AC

Abstract: VS-30BQ060PbF 40MT160KPBF vishay 1N4007 DO-213AB ss32 control pack 70MT160KPBF 20bq030pbf 430 SBL2040CT v40150 MBR10T100
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . V I S H AY I N T E R T E C H N O L O G Y, I N C . 整流器 整流器 选型指南 肖特 基 整 流 器 超快 恢 复整流器 标 准和快 速恢 复整流器 桥式整流器 w w w. v i s h a y. c o m

vishay Axial DO-204AR

Contextual Info: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

209CmQ150

Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78