IR 3010 Search Results

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

Contextual Info: 1 oo I cu en cu oo + o o ir ; I CD LO cr^ S- 2 1 .2 + 0 .2 26 .5 ± 0.2 31± 0.3 457942 6 5 4 3 2 1 3020400007 3010400012 3021000027 3021000022 3020400006 3010200033 m ^ mM SR m ?l m íf # « X "ir. « % 1 1 3 1 1 1 I I H 62 PA H 62 H 62 65Mn ZZnAl4-l /v}

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

LG color tv Circuit Diagram schematics

Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Contextual Info: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS

653A1A104

Abstract: 650c1b224 625B electrocube 650D1A106 650D1A474 650B1B102 650B 650C 650B1A333 652A1A104
Contextual Info: METALLIZED POLYCARBONATE CAPACITORS 650 SERIES This metallized polycarbonate capacitor series exhibits superior electrical characteristics over an extremely wide temperature range. Their miniature size, high Q, excellent IR and capacitance stability make them ideally suited to

625B electrocube

Abstract: Polycarbonate capacitor 650d capacitor MIL-C-19978 electrocube 650B POLYCARBONATE CAPACITORS
Contextual Info: METALLIZED POLYCARBONATE CAPACITORS 650 SERIES This metallized polycarbonate capacitor series exhibits superior electrical characteristics over an extremely wide temperature range. Their miniature size, high Q, excellent IR and capacitance stability make them ideally suited to

diode 9306

Abstract: FA 4301 SFH 9500 SFH 5110 bpx 48 BP104 SFH 4552 SFH9240 GEOY6972 GPXY6992
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Maßbilder in mm inch Outline Drawings dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) SFH 5110, SFH 5111 Figure 2 6.1 (0.240) 5.9 (0.232)

LA7810

Contextual Info: SANYO S E M I C O N D U C T O R CORP 7b DE J T T T V D T b OOOlflTS S . f 7 9 9 7 0 7 6 SANYO SEMICONDUCTOR CORP LA781 0,781 ;1 monolithic linear IC C O L O R T V SY N C H R O N IZ A T IO N , D E F L E C T I O N C IR C U IT C IR C U IT D R A W IN G N o .S I B D . S 1 B 1

330B1A505

Abstract: 330D1A105 330B1C683 330D1A154 330B1A102 330B1A155
Contextual Info: electrocube METALLIZED POLYPHENYLENE SULFIDE 330 SERIES This metallized Polyphenylene Sulfide capacitor series exhibits superior electrical characteristics over an extremely wide temperature range. Their miniature size, high Q, excellent IR and capacitance stability make them ideally suited to filter network and other

13003 HJ

Abstract: H1L-STO-883 HJ 13003 eb 13003 13003 sd SR 13003 CA 339G chanies diagram DF 13003 JD 1801
Contextual Info: M IL-M -38510/339C 2 September 1986 jf f F r ir s w r f f G ’-M IL-M -38510/339B I S Novem ber 1935 M IL IT A R Y S P E C IF IC A T IO N M IC R O C IR C U IT S , D IG IT A L , B IP O L A R , ADVANCED SCHOTTKY TTL OATA S E L E C T O R S / M U L T IP L E X E R S WITH TH REE-STA TE O U TPU TS,

Contextual Info: APPLICATION NOTE Solder Reflow Information Assembly of a surface mount device depends on many process material and equipment parameters. Two of the most common processes used are infrared IR and convection reflow. Skyworks products come in three different termination finishes, depending

circuit diagram of moving LED message display

Abstract: remote control receiver ir tv schematic light following robot diagram remote control car circuit diagram ir sensor ic circuit diagram of moving LED message display key circuit diagram for simple IR receiver RC-5 ir remote control moving message LED display schematic ir transmitter for tsop1838
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2560/D 9/2003 Freescale Semiconductor, Inc. MC68HC908EY16 IR Receiver for Remote Control of LIN Robot By: Graham Brown Motorola TSPG, East Kilbride, Scotland Introduction This document describes an application that uses the EY16 LIN demonstration

Contextual Info: APPLICATION NOTE Solder Reflow Information Assembly of a surface mount device depends on many process material and equipment parameters. Two of the most common processes used are infrared IR and convection reflow. Skyworks products come in three different termination finishes, depending

TX6 -G

Contextual Info: High Speed LAN Interface Module Features • Complies with or exceeds IEEE 802.3, 10BT/100BX requirements • Fully functional with 8 mA DC Bias • Developed under ISO 9000 provisions • Construction withstands IR/VP processes • Optimized for 155 Mbps applications

DSF8012G

Abstract: EPF8012GM EPF8012M
Contextual Info: High Speed LAN Interface Module Features • Complies with or exceeds IEEE 802.3, 10BT/100BX requirements • Fully functional with 8 mA DC Bias. • Developed under ISO 9000 provisions • Construction withstands IR/VP processes EPF8012M & EPF8012GM PCA Part Number s

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

L64381

Abstract: S556-5999-29
Contextual Info: defining a degree of excellence 10BASE-T NETWORK COMPONENTS 960057A • Designed for use with LSI Logic L64381 10Base-T PHY transceiver • Low profile, surface mount package, rated for 225ºC peak IR reflow temperature • Integrated resistor network for impedance matching

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 4.7 µH ±20% Rated current ∆T = 40 K IR 0.9 A max. Saturation current |ΔL/L| < 20% 2.4 A typ. DC Resistance

RD 627

Abstract: EPF8115G
Contextual Info: 10/100Base-TX Interface Module with Enhanced Common Mode Attenuation ELECTRONICS INC. EPF8115G • Guaranteed to operate with 8 mA DC Bias at 70°C • Robust construction to meet IR/VP soldering processes • Complies with or exceeds IEEE 802.3, 10/100Base-TX Standards

Contextual Info: High Speed LAN Interface Module for TSC78Q2120 Features • Complies with or exceeds IEEE 802.3, 10BT/100BX requirements • Fully functional at 70 °C with 8 mA DC Bias per 100 Ω • Developed under ISO 9000 provisions • Construction withstands IR/VP processes

EPF8107G

Contextual Info: 10/100Base-TX Interface Module with Enhanced Common Mode Attenuation ELECTRONICS INC. EPF8107G • Guaranteed to operate with 8 mA DC Bias at 70°C • Robust construction to meet IR/VP soldering processes • Complies with or exceeds IEEE 802.3, 10BT/100BX Standards

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 10 mA L 3.3 µH ±20% Rated current ∆T = 40 K IR 1.1 A max. Saturation current |ΔL/L| < 20% 2.95 A typ. DC Resistance

EPE6167G

Abstract: DP83902
Contextual Info: 10 Base-T NIC Module with Enhanced CMA and Resistor Network ELECTRONICS INC. EPE6167G • Optimized for DP83902, 905, 907, 932 PHY chips • • Robust construction allows for IR/VP processes • • Complies with or exceeds IEEE 802.3, 10 Base-T Requirements •