IPD2 Search Results

2N06L35

Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N06L30

Abstract: IPD25N06S4L-30 4N06L
Contextual Info: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

optocoupler spice

Abstract: 5988-4104EN 354 optocoupler optocoupler spice model analog optocoupler opto isolator photodiode HCNR201 2N3904 2N3906 E55361
Contextual Info: High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 IPD2/IPD1 Transfer Gain HCNR200: ± 15% HCNR201: ± 5% • Low Gain Temperature Coefficient: -65 ppm/ °C • Wide Bandwidth – DC to

mil-d-87157

Abstract: 74LS138 led matrix IC 74ls244 latch datasheet 74LS138 night-vision digital goggle 74LS244 74LS245 IPD2545A IPD2547A IPD2548A
Contextual Info: IPD2545A GREEN IPD2547A YELLOW IPD2548A HIGH EFFICIENCY RED 0.252" 4-Character 5 x 7 Dot Matrix X-Y Stackable Industrial Alphanumeric Programmable Display with Built-in CMOS Control Functions Dimensions in inches mm 1.200 max. (30.48) .150 ref. (3.81)

BF907

Abstract: QCPL hcnr201 spice model optocoupler spice model
Contextual Info: Wfipl m L ftm HEW LETT PACKARD High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 Ipd2/Ipdi Transfer Gain HCNR200: ± 15% HCNR201: ±5% • Low Gain Temperature Coefficient: -65 ppm/°C

nec ram

Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT ¿ÍPD26401 1M-BIT SRAM AND 2M-BIT MASK ROM COMBO CHIP SRAM 128K-WORD BY 8-BIT / MASK ROM (256K-WORD BY 8-BIT) Description The /iPD26401 is a memory device combined 1,048,576 bits (131,072 words x 8 bits) CMOS static RAM and

Contextual Info: DATA SHEET_ /iPD23C32000L MOS INTEGRATED CIRCUIT 32M-BIT MASK-PROGRAMMABLE ROM 4M -W ORD BY 8-BIT BYTE MODE / 2M-W ORD BY 16-BIT (W ORD MODE) Description The ^¡PD23C32000L is a 33,554,432 bits mask-programm able ROM. The word organization is selectable (BYTE

Contextual Info: SIEMENS MPD2545A TXVB, IPD2545A GREEN MPD2547A TXVB, IPD2547A YELLOW MPD2548A TXVB, IPD2548A Package Dimensions in Inches mm . _1.200 max. (3 0 4 8 ) , 70 FEATURES * Four .25" Dot Matrix Characters in Hermetic Package * Built-in Memory, Decoders, Multiplexer and

Contextual Info: JJPD23C4001E 524,288 X 8-Bit Mask-Programmable CMOS ROM NEC NEC Electronics Inc. Description Pin Configuration The /iPD23C4001 E is a 524,288-word by 8-bit static ROM fabricated with CMOS silicon-gate technology and designed to operate from a single + 5-volt power supply.

optocoupler spice model

Abstract: analog optocoupler hcnr201 hcnr201 optocoupler application BS415 BS7002 E55361 HCNR200 HCNR201 6N139 Spice Model hcnr201 application
Contextual Info: H High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 IPD2/IPD1 Transfer Gain HCNR200: ± 15% HCNR201: ± 5% • Low Gain Temperature Coefficient: -65 ppm/ °C • Wide Bandwidth – DC to

IEC61249-2-21

Abstract: IPP26CNE8N 25CNE8N
Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

IPB26CN10NG

Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

optocoupler spice model

Abstract: optocoupler as isolated linear opamp hcnr201 application BS415 BS7002 E55361 HCNR200 HCNR201 UL 2651
Contextual Info: H High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 IPD2/IPD1 Transfer Gain HCNR200: ± 15% HCNR201: ± 5% • Low Gain Temperature Coefficient: -65 ppm/ °C • Wide Bandwidth – DC to

220N06L

Abstract: JESD22 g3pf V5V60
Contextual Info: IPD220N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 22 mΩ ID 30 A • Excellent gate charge x R DS(on) product (FOM)

JESD22

Abstract: 250N06N
Contextual Info: Type IPD250N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 25 mΩ ID 28 A • Excellent gate charge x R DS(on) product (FOM)

26CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

Contextual Info: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

optocoupler spice model

Abstract: 354 optocoupler 6N139 Spice Model analog optocoupler hcnr201 opto isolator photodiode BS415 BS7002 E55361 HCNR200 HCNR201
Contextual Info: High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 IPD2/IPD1 Transfer Gain HCNR200: ± 15% HCNR201: ± 5% • Low Gain Temperature Coefficient: -65 ppm/ °C • Wide Bandwidth – DC to

26CN10N

Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
Contextual Info: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)

BS415

Abstract: BS7002 E55361 HCNR200 HCNR201 Isolation amplifier optocoupler spice model Agilent High-Linearity Analog Optocouplers EN60065, monitor
Contextual Info: High-Linearity Analog Optocouplers Technical Data HCNR200 HCNR201 Features Applications • Low Nonlinearity: 0.01% • K3 IPD2/IPD1 Transfer Gain HCNR200: ± 15% HCNR201: ± 5% • Low Gain Temperature Coefficient: -65 ppm/ °C • Wide Bandwidth – DC to

23C2001

Contextual Info: /iPD23C2001 262,144 x 8-BIT MA S K - p R ° G r a m m a b l e CMOS ROM iLflU'S* H Eli W NEC Electronics Inc. Descriiption Pin Configuration The//PD23C2001 is a 262,144-word by 8-bit static ROM fabricated with C M O S silicon-gate technology. Designed to operate from a single +5-volt power

20n03l

Abstract: IPU20N03L Q67042-S4106 20n03 TO-251 Outline ANPS071E IPD20N03L
Contextual Info: IPD20N03L IPU20N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS on 20 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance

UPD23C4000

Abstract: C-5a-3 QFP68 upd23c40
Contextual Info: pPD23C4000 4,194,304-Bit Mask-Programmable CMOS ROM Description Pin Configurations The /iPD23C4000 is a 4,194,304-bit ROM fabricated with CMOS silicon-gate technology. The device is static in operation and has three-state outputs, fully TTLcompatible inputs and outputs, and an output enable pin

PD23C64000AL

Abstract: d23c64
Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT /iPD23C64000AL 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C64000AL is a 67,108,864 bits mask-programm able ROM. The word organization is selectable (BYTE