IPD12 Search Results

IPD12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TIPD128		Texas Instruments	Capacitive Load Drive Verified Reference Design Using an Isolation Resistor

IPD12 Datasheets (48)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPD12000	Net to Net Technologies	DSLAM Stackable DC 14 slot	Original	PDF	244.95KB	2
IPD1-20-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN RECEPT .100" 40POS	Original	PDF		2
IPD1-20-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF	311.84KB
IPD1-20-D-K-M	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONNECTOR	Original	PDF	311.84KB
IPD1-20-D-K-R	Samtec	CONN RCPT HSG 40POS 2.54MM	Original	PDF	325.25KB	3
IPD1-20-D-R	Samtec	CONN RCPT HSG 40POS 2.54MM	Original	PDF	325.25KB	3
IPD1-20-S-K	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF	325.25KB	3
IPD1-20-S-K-R	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF	325.25KB	3
IPD1-20-S-R	Samtec	CONN RCPT HSG 20POS 2.54MM	Original	PDF	325.25KB	3
IPD122N10N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 12.2 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 59.0 A;	Original	PDF	250.85KB	9
IPD122N10N3GATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A	Original	PDF	488.6KB
IPD122N10N3GBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A TO252-3	Original	PDF	483.77KB
IPD1-25-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING 50 POS 2.54MM ST	Original	PDF		2
IPD1-25-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF	311.84KB

IPD1-25-D-K-M	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF	325.25KB	3
IPD1-25-D-K-R	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF	325.25KB	3
IPD1-25-D-R	Samtec	CONN RCPT HSG 50POS 2.54MM	Original	PDF	325.25KB	3
IPD1-25-S-K	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF	325.25KB	3
IPD1-25-S-K-R	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF	325.25KB	3
IPD1-25-S-R	Samtec	CONN RCPT HSG 25POS 2.54MM	Original	PDF	325.25KB	3

IPD12 Price and Stock

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Infineon Technologies AG IPD122N10N3GATMA1 MOSFETs TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPD122N10N3GATMA1		23,921			1 $1.27 10 $0.90 100 $0.78 1000 $0.68 10000 $0.56	Buy Now
Arrow Electronics ()	IPD122N10N3GATMA1		7,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.59	Buy Now
	IPD122N10N3GATMA1	Cut Strips	1,120	16 Weeks	1	1 $0.80 10 $0.68 100 $0.61 1000 $0.51 10000 $0.51	Buy Now
Rochester Electronics	IPD122N10N3GATMA1		4,138		1	1 - 10 - 100 $0.77 1000 $0.64 10000 $0.57	Buy Now
TME	IPD122N10N3GATMA1				1	1 $1.22 10 $0.99 100 $0.78 1000 $0.64 10000 $0.59	Get Quote
EBV Elektronik	IPD122N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-25-D-K Headers & Wire Housings .100 Mini Mate Discrete Wire Socket Housing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPD1-25-D-K		548			1 $1.52 10 $1.30 100 $1.30 1000 $1.21 10000 $1.21	Buy Now
Verical ()	IPD1-25-D-K		5,643		7	1 - 10 $1.09 100 $1.09 1000 $1.09 10000 $1.09	Buy Now
	IPD1-25-D-K		825		25	1 - 10 - 100 $3.01 1000 $2.00 10000 $2.00	Buy Now
Arrow Electronics	IPD1-25-D-K		1	1 Weeks	1	1 $1.90 10 $1.90 100 $1.90 1000 $1.90 10000 $1.90	Buy Now
Samtec Inc IPD1-20-D-K Headers & Wire Housings .100 Mini Mate Discrete Wire Socket Housing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPD1-20-D-K		546			1 $0.98 10 $0.98 100 $0.97 1000 $0.96 10000 $0.96	Buy Now
Verical ()	IPD1-20-D-K		4,545		12	1 - 10 - 100 $0.61 1000 $0.61 10000 $0.61	Buy Now
	IPD1-20-D-K		1,075		50	1 - 10 - 100 $1.36 1000 $1.29 10000 $1.29	Buy Now
	IPD1-20-D-K		342		12	1 - 10 - 100 $0.50 1000 $0.50 10000 $0.50	Buy Now
Arrow Electronics	IPD1-20-D-K		342	1 Weeks	1	1 $0.50 10 $0.50 100 $0.50 1000 $0.50 10000 $0.50	Buy Now
Samtec	IPD1-20-D-K	Bulk	4,545	0 Weeks, 1 Days	1	1 $1.82 10 $1.82 100 $1.50 1000 $0.86 10000 $0.54	Buy Now
Samtec Inc IPD1-25-D-R Headers & Wire Housings .100 Mini Mate Discrete Wire Socket Housing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPD1-25-D-R		300			1 $0.94 10 $0.93 100 $0.91 1000 $0.91 10000 $0.91	Buy Now
Samtec Inc IPD1-20-D-K-M Headers & Wire Housings .100" Mini Mate(R) Discrete Wire Socket Housing
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IPD1-20-D-K-M		228			1 $3.89 10 $3.89 100 $2.70 1000 $2.02 10000 $1.93	Buy Now
Verical	IPD1-20-D-K-M		100		3	1 - 10 $2.89 100 $2.34 1000 $1.97 10000 $1.66	Buy Now
Quest Components ()	IPD1-20-D-K-M		20			1 $5.79 10 $4.24 100 $3.86 1000 $3.86 10000 $3.86	Buy Now
	IPD1-20-D-K-M		11			1 $3.98 10 $1.99 100 $1.99 1000 $1.99 10000 $1.99	Buy Now
	IPD1-20-D-K-M		11			1 $4.78 10 $3.51 100 $3.51 1000 $3.51 10000 $3.51	Buy Now
Samtec	IPD1-20-D-K-M	Tube	100	0 Weeks, 1 Days	1	1 $2.89 10 $2.89 100 $2.34 1000 $1.97 10000 $1.66	Buy Now

Find more IPD12 price and stock on Findchips.com

IPD12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10	PDF
12N03L Contextual Info: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L	PDF
C15N Contextual Info: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and	Original	D-47057 ipag35 IPD12 IPD12 PO-IPD12-0004 C15N	PDF
12N03L Abstract: 12N03 Contextual Info: IPD12N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 10.4 30 A P-TO252 Superior thermal resistance	Original	IPD12N03L P-TO252 IPD12N03L P-TO252 Q67040-S4342 12N03L 20ents 12N03L 12N03	PDF
12CN10N Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N	PDF
marking EB5 Abstract: diode marking eb5 marking G9 Contextual Info: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )& Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10	PDF
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a	PDF
12N03L Abstract: IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11 Contextual Info: IPD12N03L IPU12N03L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 30 •Logic Level RDS on •Low On-Resistance RDS(on) ID •Excellent Gate Charge x R DS(on) product (FOM) V 10.4 mΩ 30 P- TO251 -3-1 A P- TO252 -3-11 •Superior thermal resistance	Original	IPD12N03L IPU12N03L Q67040-S4342 12N03L Q67042-S4043 12N03L IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11	PDF
ip dslam Abstract: IPD12000 DSLAM configuration Contextual Info: IP DSL Access Multiplexer 12000 IPD12000 IPD12000 Native IP DSLAM The IP DSLAM for large scale Central Office or MDU/Campus deployments Overview Features Utilizes Net to Net’s IPacket A rc h i t e c t u re Net to Net Technologies’ IP DSL Access Multiplexer is the indus	Original	IPD12000 UL1950 -200ft 500ft) ip dslam IPD12000 DSLAM configuration	PDF
122N10N Contextual Info: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3	PDF
122N10N Abstract: IPD122N10N3 G JESD22 Contextual Info: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N	PDF

Contextual Info: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )& Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5	Original	IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à	PDF
127n06l Abstract: IPD127N06L Contextual Info: IPD127N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level 60 R DS on ,max 12.7 ID 50 V mΩ A • 175 °C operating temperature • Avalanche rated	Original	IPD127N06L PG-TO252-3 127N06L 127n06l	PDF
12N03L Abstract: 12n03lb 12n03 IPD12N03LB PG-TO252-3-11 Contextual Info: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12n03lb 12n03 PG-TO252-3-11	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N	PDF
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G	PDF
12CN10N Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N	PDF
12N03L Abstract: 12N03LB IPD12N03LB PG-TO252-3-11 12n03 Contextual Info: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12N03LB PG-TO252-3-11 12n03	PDF
10 GHz pin diode Abstract: diode all 4606 C10B C10N Contextual Info: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for	Original	D-47057 ipag35 IPD12 Responsiv75 DS-IPD12 C10Z-0004 10 GHz pin diode diode all 4606 C10B C10N	PDF
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff	PDF
12N03L Abstract: IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03 Contextual Info: IPD12N03L IPU12N03L Preliminary data OptiMOS Power-Transistor Product Summary Feature • N-Channel · Logic Level · Low on-resistance R DS on · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature	Original	IPD12N03L IPU12N03L P-TO251 P-TO252 Q67040-S4342 12N03L Q67042-S4043 12N03L IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03	PDF

IPD12 Search Results

IPD12 Result Highlights (1)

IPD12 Datasheets (48)

IPD12 Price and Stock

Infineon Technologies AG IPD122N10N3GATMA1

Samtec Inc IPD1-25-D-K

Samtec Inc IPD1-20-D-K

Samtec Inc IPD1-25-D-R

Samtec Inc IPD1-20-D-K-M

IPD12 Datasheets Context Search

12CN10N

12N03L

C15N

12N03L

12CN10N

marking EB5

12CN10N

12CN10N

12N03L

ip dslam

122N10N

122N10N

127n06l

12N03L

infineon marking TO-252

12CN10N

12CN10N

12N03L

10 GHz pin diode

12CNE8N

12N03L