IPD0 Search Results

04N03LA

Abstract: 04n03l smd marking D50 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO251-3-1 P-TO252-3-11 smd diode marking c3
Contextual Info: Type OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A • N-channel, logic level

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

09n03lb

Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
Contextual Info: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level

060N03L

Abstract: IPD060N03L IPD060N03 IPD060N03L G IPS060N03L G IPU060N03L G IEC61249-2-21 IPU060N03L 060n03 3 pin FET smd 2300
Contextual Info: Type OptiMOS 3 Power-Transistor IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 6 mΩ ID 50 A • Qualified according to JEDEC1) for target applications

04n03l

Abstract: TO252-3 IPD04N03LB PG-TO252-3-11 PG-TO252 IPU04N03LB
Contextual Info: OptiMOS 2 Power-Transistor IPD04N03LB G IPS04N03LB G IPU04N03LB G IPF04N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.1 mΩ ID 50 A • N-channel, logic level

053N08N

Abstract: IPD053N08N3 IPD053N08N3 G JESD22 d90a
Contextual Info: IPD053N08N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 80 V R DS(on),max 5.3 mΩ ID 90 A • Very low on-resistance R DS(on) • 175 °C operating temperature

04N03LA

Abstract: Q67042-S4177 IPD04N03LA P-TO252-3-11
Contextual Info: IPD04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 3.8 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)

09N03

Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
Contextual Info: IPD09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

IPD06N03LA

Contextual Info: IPD06N03LA Preliminary data OptiMOSâ 2 Power-Transistor Product Summary Feature Ideal for high-frequency dc/dc converters  n-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Low On-Resistance RDS(on) VDS 25 V RDS(on) 5.7 m
ID 50

Contextual Info: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ ID

Contextual Info: Type IPD05N03LB G OptiMOS 2 Power-Transistor IPS05N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)

050N03L

Contextual Info: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications

040N03L

Abstract: 040N03
Contextual Info: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications

090n03l

Abstract: IPU090N03LG IPU090N03L G
Contextual Info: Type OptiMOS 3 Power-Transistor IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 9 mΩ ID 40 A 1) • Qualified according to JEDEC for target applications

050N03L

Abstract: PG-TO251-3-21 PG-TO251-3-11 PG-TO252-3-11 IPD050N03L G PG-TO251 IPU050N03L
Contextual Info: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications

040N03L

Abstract: 040N03
Contextual Info: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications

Contextual Info: IPD03N03LA G OptiMOS 2 Power-Transistor IPS03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level

040N03L

Abstract: 040N03
Contextual Info: IPD040N03L G Type IPS040N03L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 4 mΩ ID 90 A 1) • Qualified according to JEDEC for target applications

Contextual Info: IPD03N03LA G OptiMOS 2 Power-Transistor IPS03N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 3.2 mΩ ID 90 A • N-channel, logic level

050N03L

Contextual Info: Type OptiMOS 3 Power-Transistor IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications

05N03LB

Contextual Info: OptiMOS 2 Power-Transistor IPD05N03LB G IPS05N03LB G IPU05N03LB G IPF05N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 4.8 mΩ ID 90 A • N-channel, logic level

marking code br 39 SMD

Abstract: smd marking code 321 05n03la
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ

IPD06N03LA

Contextual Info: IPD06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.7 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

04n03

Abstract: 04N03LA
Contextual Info: OptiMOS 2 Power-Transistor IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ