INTERMETAL DIODE Search Results

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE J> • 4447SAM 0010312 135 H H P A IDA-07318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver HEW LETT PACKARD 180 mil Package Features • • • • • • • • High Data Rates: 1.5 Gb/s NRZ High Modulation Current: 50 mA

IDA-07318

Abstract: INTERMETal diode
Contextual Info: IDA-07318 M aglC '" Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver ft "KM P A C K A R D ¥ t i¡¡ % H E W L E T T 180 mil Package Features • • • • • • • • High Data Rates: 1.5 Gb/s NRZ High M odulation Current: 50 mA High Prebias Current: 50 mA

lm 5640

Contextual Info: HEWLETT — PACKARD/ blE ]> CMPNTS V 7 -V H EW LETT mPPm P A C K A R D • IDA-07318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver Features • • • • • • • • OGDflSfib TIT 44475Û4 180 mil Package High Data Rates: 1.5 Gb/s NRZ High Modulation Current: 50 mA

Contextual Info: data sheet e m O IDA-07318 MagIC Silicon Bipolar MMIC 1.5 Gb/s Laser Diode Driver February, 1992 avan tek A Subsidiary of Hewlett-Packard Features • • • • • • • • Avantek 180 mil Package High Data Rates: 1.5 Gb/s NRZ High Modulation Current: 50 mA

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

RFIC and MMIC Amplifiers

Abstract: HPMX-3002 mmic ina Hewlett-Packard transistor microwave
Contextual Info: RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit RFIC and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of the communications industry. 15␣ GHz. Design flexibility is

HMMC-2006

Abstract: 9x-series in 3003 TRANSISTOR HMMC-1002 HMMC-2007 HMMC-2027 HP-25 HPMX-3003 HPMX-5001 HPMX-5002
Contextual Info: RFIC Mixers, Modulators, Switches, Attenuators, Frequency Dividers, and Other Functions Characteristics Hewlett-Packard manufactures a broad line of innovative microwave and RF integrated circuits for use in the communications marketplace. Our product offering

GaAs pHEMT Low Noise MMIC Amplifier

Contextual Info: W h ìl H EW LETT K KM PA CK A R D RFIC and MMIC Amplifiers Hewlett-Packard offers a broad line of Radio Frequency Integrated Circuit RFIC and Monolithic Microwave Integrated Circuit (MMIC) amplifiers for use in all aspects of the communica­ tions industry’.

TRANSISTOR 30GHZ

Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
Contextual Info: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.

aec-q100 001

Abstract: JESD22-B100 PHYSICAL DIMENSIONS JESD22-B107 JESD22-A102 JESD22-A108 JESD22-A110 JESD22-B105 JESD22-B106 JESD22-B107 Fairchild wafer process
Contextual Info: Revised December 2000 Quality and Reliability for Interface and Logic Quality and Reliability Qualification Requirements Fairchild Semiconductor’s quality mission is to deliver superior multi-market semiconductor products and customer value through innovation, service and manufacturing

x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Contextual Info: A GaAs X-Band Multifunction Control MMIC Using the MSAG Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel

hot electron devices

Abstract: SGS-Thomson ball grid array VLSI Vision
Contextual Info: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,

Dielectric Constant Silicon Nitride

Abstract: Amorphous AS antifuse pp186 pp151-153
Contextual Info: RELIABILITY MECHANISM OF THE UNPROGRAMMED AMORPHOUS SILICON ANTIFUSE by Richard J. Wong and Kathryn E. Gordon 7 7-15 Reprints Presented at the International Reliability and Physics Symposium April 1994 Copyright IEEE 1994 IRPS 1994 REPRINT Abstract Amorphous Silicon Antifuse Structure

Transistor morocco 9740

Abstract: Ablebond 8360 con hdr hrs ablebond 8086 interfacing with 8254 peripheral Date Code Formats diodes St Microelectronics formatter board Canon interfacing of 8237 with 8086 ST tOP MaRKinGS 388BGA
Contextual Info: RELIABILITY REPORT Q98001 SICL BUSINESS UNIT REPORT NUMBER : Q98001 QUALIFICATION TYPE : NEW DEVICE - NEW PACKAGE DEVICE : STPC Client SIP101 SALES TYPES : STPCD0166BTC3 - STPCD0175BTC3 TECHNICAL CODE : MDBT*CHDT1BR PROCESS : HCMOS6 - CROLLES FAB LOCATION

FDC9268

Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

N20X DIODE

Abstract: A35355 TA8923 ta8872 ta8903 TA8782 ta7833 transistor 123 TA7811 ta8825
Contextual Info: Reliability Update Table of Contents Overview . 1 Organization of the Update . 1

lm3242

Abstract: LM356 op-amp datasheet LM356 LM6484 SC14421 LM380 spice lm7412 LM117 model SPICE LM356 audio amplifier pc preamp with bass treble circuit diagrams lm324
Contextual Info:  Welcome to National Semiconductor's latest Linear Designers' Guide! Included in this guide are: • Product selection trees • Associated guides with definitive specifications • Alphanumeric index, to assist in finding the product ID you are seeking

koike relays

Abstract: ed27 smd diode EM 231 WIRING DIAGRAM corona discharge circuit simulation smd transistor marking xy TOSHIBA Thyristor tunnel diode GaAs QFP100 injection molding machine wire diagram position sensitive diode circuit
Contextual Info: [ 2 ] Semiconductor Reliability Contents 1. Reliability Concept . 1 1.1 Defining and Quantifying Reliability. 1 1.2 1.3 Reliability and Time. 1

ISO STANDARDS SHEET METAL THINNING

Abstract: TRANSISTOR SUBSTITUTION 1993 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SGS-Thomson zener smd eurotherm ST marking code crolles eurotherm 451 ALL TYPE IC DATA AND manual substitution BOOK IEC 68-2-27 spectrometer U.S.A Eurotherm Controls
Contextual Info: SURE 7 Semiconductor Users Reliability Evaluation Quality and Reliability Program Published by SGS-THOMSON Quality and Reliability Management “YOU HAVE MY WORD ON IT” As I noted in SURE 6, service is the number one strategic priority at SGS-THOMSON. We consider service as a

transistor D1564

Abstract: D1564 d1564 transistor electrode oven calibration certificate formats MIL-STD-883H INCOMING RAW MATERIAL INSPECTION procedure rf A434 Hardness Tester SH 21 poly aluminum chloride UPS chloride linear plus
Contextual Info: MIL-STD-883H METHOD 5010.4 TEST PROCEDURES FOR COMPLEX MONOLITHIC MICROCIRCUITS 1. PURPOSE. This method establishes screening, qualification, and quality conformance requirements for the testing of complex monolithic microcircuits to assist in achieving the following levels of quality class level B and S and reliability

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

LQFP256

Abstract: ic 313 igfet 352AL 80C90 CCD SMD P237 QFP100 SSOP20 SSOP30
Contextual Info: [2] 半導体の信頼性 目 1. 信頼性の考え方 .1 1.1 1.2 1.3 1.4 2. 信頼性の定義と定量化.1

tm-1017

Abstract: JESD31 marking code ny SMD Transistor npn JEDEC JESD31 Automated Guided Vehicles project A434 RF MODULE MIL-I-46058 ASTM E104 M38510 cross index semiconductors cross index
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 September 2007. INCH-POUND MIL-PRF-38535H 16 March 2007 SUPERSEDING MIL-PRF-38535G 7July 2006 PERFORMANCE SPECIFICATION INTEGRATED CIRCUITS MICROCIRCUITS MANUFACTURING,