INFRARED EMITTING DIODE LED 1060-NM MW Search Results

optically pumped semiconductor laser

Abstract: 532 nm laser diode laser Projector microdisplay infrared emitting diode led 1060-nm mW
Contextual Info: アプリケーション & 使用例 Mobile full-color projection 2009 年 10 月 モバイル機器向けフルカラープロジェクタ In search of the missing color (探し求めていた色が遂に実現) Just as mobile phones have steadily grown in performance and functionality

532 nm laser diode

Abstract: infrared emitting diode led 1060-nm mW optically pumped semiconductor laser green led laser LED "1060 nm" laser projector Head-Up Displays
Contextual Info: Applications & Cases Mobile full-color projection October 2009 In search of the missing color Just as mobile phones have steadily grown in performance and functionality while shrinking in size, their displays have undergone a similarly impressive development over the past decade. Throughout their evolution from

F 0094U

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse

F 1235A

Abstract: 1235a F1235A
Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235A Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 10 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 200 x 200 µm2

OPTOKOPPLER

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2

Contextual Info: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse

0118J

Abstract: osram topled
Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2

GCOY6878

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2

GMOY6078

Abstract: Q65110A0136
Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2

GMOY6178

Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat Chip position -Cathode SFH 409 Anode (SFH 487, SFH 4391) O in C\J (O o X 0) G EX06250 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Sehr enger Abstrahlwinkel • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren

LD271 IR LED

Abstract: LD271 APPLICATIONS IR LD271 siemens LD
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 5.9 5.5 0.6 0.4 GEX06239 Approx. weight 0.5 g Cathode 5.9 5.5 OO T— ¡a 0.6 0.4 Area not flat GE006645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 0.6 0.4 5.7 5.1 29 27 Chip position Cathode Diode Collector (Transistor) fex06260 1.8 1.2 GEX06260

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

Q62702-P1001

Abstract: GEX06250 Q62702-P1002 Q62702-P860
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 0.7 0.4 5.2 4.5 4.1 3.9 4.0 3.6 ø3.1 ø2.9 0.8 0.4 1.8 1.2 29 6.3 5.9 27 Cathode SFH 409 Anode (SFH 487) (3.5) Chip position 0.6 0.4 GEX06250 fex06250 2.54 mm spacing 0.6 0.4 Approx. weight 0.3 g

optokoppler

Abstract: GaAs wafer dicing Chip free
Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 200 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 8 mil) F 1235B F 1235C Vorläufige Daten / Preliminary Data Wesentliche Merkmale • • • • • • Features Chipgröße 200 x 200 µm Emissionswellenlänge: 950 nm

Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 3.5 29 27 4.0 3.6 ø3.1 ø2.9 0.7 0.4 0.8 0.4 2.54 mm spacing 1.8 1.2 4.1 3.9 6.3 5.9 0.6 0.4 Chip position Cathode (SFH 409) Anode (SFH 487, SFH 4391) fex06250 5.2

GEO06645

Abstract: GEX06239 LD271 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833 Q62703-Q838 LD271 APPLICATIONS LD271 IR LED
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239

LD271 IR LED

Abstract: LD271 LD271 remote control IR LD271 GEO06645 GEX06239 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239

LD271 IR LED

Abstract: data sheet ld 271 OPTO LD 271 H LD271 APPLICATIONS LD271 remote control infrared remote switch IR LD271 ld 1.8 ld 18 LD271
Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 1.0 0.7 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 1.3 1.0 2.54 mm spacing

transistor 415

Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0

GEO06645

Abstract: GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54 mm 1.8 1.2 9.0 8.2 0.6 0.4 GEO06645 Chip position Area not flat 29.5 27.5 Cathode Diode