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    0118J Search Results

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    0118J Price and Stock

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    Amphenol PCD ALBFLB3E180118J

    FLUOROSILICONE FAIRLEAD BLOCK
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    DigiKey ALBFLB3E180118J Bulk 50
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    • 100 $92.92
    • 1000 $92.92
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    Newark ALBFLB3E180118J Bulk 50
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    • 100 $119.18
    • 1000 $117.73
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    Shenzhen Milliohm Electronics Co Ltd HOT-0.5-1.0-11.8-JZ-W-D

    SMD SHUNT JUMPER
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    DigiKey HOT-0.5-1.0-11.8-JZ-W-D Reel 10
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    • 10 $0.07
    • 100 $0.06
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    Amphenol Corporation ALBFLB3E180118J

    ALBFLB3E180118J - Bulk (Alt: ALBFLB3E180118J)
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    Avnet Americas ALBFLB3E180118J Bulk 19 Weeks 50
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    • 100 $97.01
    • 1000 $89.20
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    Mouser Electronics ALBFLB3E180118J
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    • 100 $93.33
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    Daniels Manufacturing Corporation (DMC) C10-118JAPKG

    Cable Mounting & Accessories SAFE-T-CABLE .022X18" KIT/w JUMPER ASSBY
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    Mouser Electronics C10-118JAPKG
    • 1 $219.97
    • 10 $207.78
    • 100 $207.78
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    Newark C10-118JAPKG Pack 1
    • 1 $188.22
    • 10 $162.56
    • 100 $162.56
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    Daniels Manufacturing Corporation (DMC) C10-118JA

    Cable Mounting & Accessories SAFE-T-CABLE KIT .022X18" /W JUMPER ASSY
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    Mouser Electronics C10-118JA
    • 1 $5.76
    • 10 $5.44
    • 100 $3.79
    • 1000 $3.78
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    Find more 0118J price and stock on Findchips.com

    0118J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OHRD1938

    Contextual Info: GaAs-IR-Lumineszenzdiode 950 nm GaAs Infrared Emitter (950 nm) F 0118J Wesentliche Merkmale Features 2 • • • • • Chip size 300 x 300 µm2 Very highly efficient GaAlAs LED High reliability High pulse handling capability Good spectral match to silicon


    Original     		0118J OHRD1938 PDF

    0118J

    Abstract: osram topled
    Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 22 mW @ 100 mA im Topled Gehäuse. • Chipgröße 300 x 300 µm2


    Original     		0118J 0118J osram topled PDF

    GCOY6878

    Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2


    Original     		0118J GCOY6878 PDF