INFINEON 07N60S5 Search Results

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

Q67040-S4186

Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated

SPI07N60S5

Abstract: 07N60S5 SPPX3N60S5
Contextual Info: SPI07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1

SPU07N60S5

Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6

07n60s5

Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5 transistor 07n60s5
Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252 • Ultra low gate charge P-TO251-3-1 • Periodic avalanche rated

07n60s5

Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251

07N60S5

Abstract: 07N60 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 C2608 Q67040-S4172
Contextual Info: SPI07N60S5 Preliminary data SPP07N60S5, SPB07N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·

07N60S5

Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.

07n60s5

Abstract: 07N60 infineon 07n60s5 SPPX3N60S5 SPB07N60S5 SPI07N60S5 SPP07N60S5 transistor 07n60s5
Contextual Info: SPI07N60S5 SPP07N60S5, SPB07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated

infineon 07n60s5

Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated

07n60s5

Abstract: transistor 07n60s5 infineon 07n60s5 Q67040-S4172 Q67040-S4328 SMD TRANSISTOR MARKING 2.x
Contextual Info: SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.6 Ω • Optimized capacitances

07N60S5

Abstract: infineon 07n60s5 SPB07N60S5 SPP07N60S5
Contextual Info: SPP07N60S5 SPB07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:

07N60S5

Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated

07n60s5

Abstract: SPP07N60S5 PG-TO263-3-2 SPB07N60S5 transistor 07n60s5
Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

07N60S5

Abstract: transistor smd code marking nc
Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.

07n60s5

Abstract: SPI07N60S5 SPP07N60S5
Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated

Contextual Info: SPB07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.6 Ω ID 7.3 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

07n60s5

Abstract: SPI07N60S5 SPP07N60S5 Q67040-S4328
Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated

Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262 • Ultra low gate charge PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.

Contextual Info: SPP07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO262-3-1 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated