IN64 Search Results

IN6284

Abstract: IN6282 IN647 2190 ctv IN6286A
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473

diode oa202

Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

MIH SERIES

Abstract: IN6476
Contextual Info: IN6461 thr IN 6468and IN6469 thru IN6476 Mierosemi Corp. SANTA A N A. CA h o i mort- in In r m i ? id y " Q - s 2 : o at ton call: TRANSIENT SUPPRESSORS FEATURES - HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M OST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.

Contextual Info: IN6461 thr IN6468 and IN6469 thru IN6476 Microsemi Corp. ? Thp diode experts i SANTA A N A , CA F o r m o r e i n f o r m a t i o n call: 714 9 7 9 -8 2 2 0 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.

Contextual Info: IN6461 thri IN6468 and IN6469 thru IN6476 SA.\ IA I V I . C l For more inforni 714 979-8220 I P i l l i FEATURES TRANSIENT SUPPRESSORS • HIGH S U R G E CAP AC ITY PR OV IDES T R A N S IE N T P R O T EC TIO N FOR M O ST C R ITIC A L CIR C U ITS . • T R IP LE LA YER PASSIVATION.

IN6463

Abstract: IN6475 IN6464 IN6476 IN6466
Contextual Info: IN6461 thru IN6468 and IN6469 thru IN6476 Microsemi Corp. Y The dio d e experts SANTA ANA, CA SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 714 979-8220 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

microDIMM 214

Abstract: 240 pin DIMM DDR2 connector JEDEC HYS64T64020EM
Contextual Info: March 2008 HYS64T64020EM–2.5–B2 HYS64T64020EM–[3/3S]–B2 HYS64T64020EM–3.7–B2 HYB64T64020EM–5–B2 214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules MDIMM SDRAM RoHS Compliant Internet Data Sheet Rev. 1.10 Internet Data Sheet HYS64T64020EM–[2.5/3/3S/3.7/5]–B2

M63001FP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

OCX1601

Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
Contextual Info: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

39T0167

Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
Contextual Info: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3

IN64

Abstract: IN1-IN64 switched integrator
Contextual Info: 0431-S0264-00 1/23 TI Internal Data—Signed NDA Required for Distribution - Draft Cycle 7 - 5/13/09 DDC264 DD C2 64 www.ti.com. SBAS368A – MAY 2006 – REVISED MAY 2009

dad2000

Abstract: dlp dad2000 DRV777 block diagram of mri scanner block diagram of ultrasound scanner dmd 0.95 1080p doppler radar circuit for speed sensing wifi ecg machine ecg semiconductors replacement guide DDC4100
Contextual Info: imaging TI HealthTech Engineering components for life. 2013 www.ti.com/healthtech TI HealthTech ➔ Table of Contents Disclaimer TI products are not authorized for use in safety-critical applications such as life support where a failure of the TI product would reasonably be expected

N38 transistor

Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Scan AV6

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

IN50P

Abstract: in60p
Contextual Info: OCX1601 Crosspoint Switch Advanced Data Sheet Features • • • • 1.6 Gb/s port data bandwidth, >128Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 160 configurable I/O ports – 80 dedicated differential input ports

IN126P

Abstract: AA-38 AH36 AR24
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Contextual Info: 1N645UR-1 CDLL645 • AVAILABLE INJAN, JANTX AND JANTXV PER MIL-PRF-19500/240 • SILICON RECTIFIER • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25ºC

IN6478-IN6484

Contextual Info: COMPLETELY ENCAPSULATED BRAZED CONSTRUCTION CAVITY-FREE OPAQUE GLASSPASSIVATED JUNCTION SOLID BRAZING. LOW RESISTANCE EXCELLENT SURGE CAPABILITIES BRAZED-TEMP > 600°C 'G lass-plastic encapsulation technique is covered by PatentNo. 3,996,602 of 1976; brazed -lead assembly b Patent No. 3,930,306 ol 1976 and glass

diode in48

Abstract: IN58 diode SN105125
Contextual Info: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit

vga bios 65550

Abstract: 65550 CHIPS chips 69000 problem chips 65554 colour tv circuit chips 65555
Contextual Info:  CHIPS SOFTWARE NOTE Chips and Technologies, Inc. Subsidiary of Intel Corp. 350 East Plumeria Drive San Jose, CA 95134 408 765-8080 SN26.6/10-98 DR655xx Display Driver Package Release Notes for Windows 95 Revision: Production Version 3.2.9 Release Date: September 22, 1998