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    IN 914 Search Results

    IN 914 Result Highlights (1)

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    54LS224AJ/B
    		Rochester Electronics LLC 54LS224 - 64-Bit FIFO Memories PDF Buy
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    IN 914 Price and Stock

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    Texas Instruments TLV9144IN

    Operational Amplifiers - Op Amps Quad 18V 125kHz m ic ropower (7 A) low
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    Mouser Electronics TLV9144IN 636
    • 1 $1.63
    • 10 $1.20
    • 100 $0.96
    • 1000 $0.84
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    Leopard Imaging LI-NT99141-USB-AF

    Cameras & Camera Modules Novatek NT99141 Auto Focusing Lens
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    Mouser Electronics LI-NT99141-USB-AF
    • 1 $89.00
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    Fluke Corporation 9142-INSZ

    Test Accessories - Other INSERT, BLANK, 9142
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    Mouser Electronics 9142-INSZ
    • 1 $503.92
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    Fluke Corporation 9142-INSD

    Test Accessories - Other INSERT, D,9142, MISC (MM) HLS
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    Mouser Electronics 9142-INSD
    • 1 $588.79
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    Fluke Corporation 9142-INSA

    Test Accessories - Other INSERT, A, 9142, MISC (IN) HLS
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    Mouser Electronics 9142-INSA
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    IN 914 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


    OCR Scan     		OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70 PDF

    2N914

    Abstract: transistor 2N914
    Contextual Info: Nicht für Neuentwicklungen Not for new developm ents 2 N 914 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxiai Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm


    OCR Scan     		2N914 2N914 transistor 2N914 PDF

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


    Original     		0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide PDF

    IRG4PC30FD

    Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD PDF

    IRG4PC40F

    Contextual Info: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91463B IRG4PC40F O-247AC O-247AC IRG4PC40F PDF

    IRG4BC20U

    Abstract: IRG4BC20
    Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20 PDF

    IRG4BC30UD

    Contextual Info: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		91453B IRG4BC30UD O-220AB o52-7105 IRG4BC30UD PDF

    IRG4BC30FD

    Abstract: diode bridge LT 405
    Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		-91451B IRG4BC30FD O-220AB IRG4BC30FD diode bridge LT 405 PDF

    IRG4PC50U

    Abstract: IRG4PC50
    Contextual Info: PD 91470F IRG4PC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91470F IRG4PC50U O-247AC O-247AC IRG4PC50U IRG4PC50 PDF

    IRG4PC50F

    Abstract: GE40-20
    Contextual Info: PD 91468C IRG4PC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91468C IRG4PC50F O-247AC O-247AC IRG4PC50F GE40-20 PDF

    IRG4PC30FD

    Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD PDF

    IRG4BC30U

    Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91452E IRG4BC30U O-220AB O-220AB IRG4BC30U PDF

    IRG4PC30UD

    Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		91462B IRG4PC30UD O-247AC O-247AC IRG4PC30UD PDF

    IRG4PC40FD

    Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91464B IRG4PC40FD O-247AC O-247AC IRG4PC40FD PDF

    IRG4PC40F

    Contextual Info: PD 91463B IRG4PC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91463B IRG4PC40F O-247AC O-247AC IRG4PC40F PDF

    IRG4PC40FD

    Contextual Info: PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91464B IRG4PC40FD O-247AC O-247AC IRG4PC40FD PDF

    IRG4BC20U

    Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91448D IRG4BC20U O-220AB O-220AB IRG4BC20U PDF

    IRG4BC40

    Abstract: IRG4BC40U
    Contextual Info: PD - 91456E IRG4BC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91456E IRG4BC40U O-220AB O-220AB IRG4BC40 IRG4BC40U PDF

    IRG4BC30F

    Contextual Info: PD - 91450B IRG4BC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91450B IRG4BC30F O-220AB O-220AB C252-7105 IRG4BC30F PDF

    IRG4PC30U

    Contextual Info: PD 91461E IRG4PC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91461E IRG4PC30U O-247AC O-247AC IRG4PC30U PDF

    IRG4PC30UD

    Abstract: IRG4PC30
    Contextual Info: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		91462B IRG4PC30UD O-247AC O-247AC IRG4PC30UD IRG4PC30 PDF

    ic AM 12A

    Abstract: IRG4BC30U
    Contextual Info: PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91452E IRG4BC30U O-220AB O-220AB ic AM 12A IRG4BC30U PDF

    IRG4PC50UD

    Abstract: IGBT IRG4PC50UD
    Contextual Info: PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		91471B IRG4PC50UD O-247AC IRG4PC50UD IGBT IRG4PC50UD PDF

    IRG4PC30F

    Contextual Info: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91459B IRG4PC30F O-247AC O-247AC IRG4PC30F PDF