IN 4151 Search Results

Contextual Info: eS&mi-donduotoi {Product*., dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201)376-8960 general purpose and switching diodes high sp««d switching Tomb = TVMI IN 4)48 IN 4149 IN 4151 IN 4152 IN 4153 IN 4154

Contextual Info: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35

2907A PNP bipolar transistors

Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

1N4150

Abstract: 1N4153 1N4153-1 1N4151
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N4150,1N 4151, 1N4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically seated leaded glass

AT-41511

Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
Contextual Info: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

transistor C456

Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and

Contextual Info: L L 4151 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 75V Forward Current 150mA Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode in MiniMELF case especially suited for automatic insertion. ‹ This diode is also available in other case styles including the

MINI-MELF DIODE BLACK CATHODE

Abstract: 1N4151 651 diode
Contextual Info: L L 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the DO-35 case with the type designation 1N4151.

Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151 FEATURES DESCRIPTION • H erm etically sealed leaded glass S O D 27 D O -35 package The 1N 4150 and 1N 4151 are high-speed sw itching diodes fabricated in planar technology, and encapsulated in herm etically sealed leaded glass S O D 27

VOGT p8

Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und

3C56

Abstract: 84A4 B094 6E2d 7A41 A03F C946 9B18 7A43 AN542
Contextual Info: Implementing FFT AN542 Implementation of Fast Fourier Transforms The FFT is implemented with Decimation In Frequency. Thus the input data before calling the FFT routine "R2FFT" should be in normal order and the transformed data is in scrambled order. The original data is

2650B

Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
Contextual Info: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the

Contextual Info: HD153014F Preliminary Data Separator with Built-in Read Pulse D etecto r and 1, 7 E n co der/D eco der Description The HD153014F is a data separator with built-in read pulse detector and (1, 7) run-length-limit encoder/decoder developed for use in magnetic

SN7449

Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

Contextual Info: r r u i m LT1304/LT1304-3.3/LTl 304-5 i TECHNOLOGY Micropower DC/DC Converters with Low-Battery Detector Active in Shutdown KO TUIKS DCSCRICTIOn • 5V at 200mA from Two Cells ■ 10nA Quiescent Current in Shutdown ■ Operates with % as Low as 1,5V ■ Low-Battery Detector Active in Shutdown

asus motherboard circuit diagram

Abstract: SuperSpeed USB 3.0 to Serial ATA Bridge P1263 intel MOTHERBOARD SERVICE MANUAL
Contextual Info: Intel Atom Processor E3800 Product Family Datasheet October 2013 Revision 1.0 Reference Number: 538136 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32800 MCM32T800 8M x 32 Bit Dynamic Random Access Memory Module The MCM32 T 800 is a dynamic random access memory (DRAM) module organized as 8,388,608 x 32 bits. The module is a 72-lead s in gle -in-line memory module (SIMM) consisting of sixteen MCM517400B DRAMs housed in 300 mil

AT-41511

Abstract: AT-41533
Contextual Info: NPN Silicon Bipolar Transistor Reliability Data AT-41511 AT-41533 The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-883. Data was gathered from the product qualification, reliability

Contextual Info: Cerm et preset potentiometers Series 415 Basic design: Moulded plastic encased, drive position ”P” Type VC 415/10 Ordering code no. 20 4151. Special version: Snap-in soldering terms ¡0 T 2,2 7,35 Electrical Specification Mechanical Specification Rated resistance range:

HX8218

Abstract: VN116 vn106 VN104 VP178 VN84 QA119 TFT LCD timing controller T-con vp77 VP44
Contextual Info: DOC No. HX8218-A-DS HX8218-A 960CH TFT LCD Source Driver with Built-in T-CON Preliminary version 01January, 2005 HX8218-A 960CH TFT LCD Source Driver with Built-in T-CON Preliminary Version 01 January, 2005 1. General Description HX8218-A is a 960-channel output Source Driver with built-in TCON and DAC. The

THERMAL Fuse m20 tf 115 c

Contextual Info: CONTA-CONNECT PVS PHOTOVOLTAIC-SYSTEM Components for electrical connectivity in photovoltaic facilities CONTA-CONNECT PVS – Components for electrical connectivity in photovoltaic facilities Overview Overview 2 The Company 3 PVS Solutions for Photovoltaic

MLA039

Abstract: 150 UH COIL AD2071 TEA1060 sdc 339 SO24 TEA1085 TEA1085A
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1085; TEA1085A Listening-in circuit for line-powered telephone sets Preliminary specification File under Integrated Circuits, IC03A March 1992 Philips Semiconductors Preliminary specification Listening-in circuit for line-powered

LL4151

Contextual Info: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case