IN 407 DIODE Search Results

Contextual Info: / ‘utren PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 BLUE HERON BLVD.• RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 5 1 -343S «FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1t .(1) Dra in-Gate Vo 1tage

Contextual Info: ^¡»litron PRODUCT ÂTÂLO' D EV IC E S ,IN C . 1177 BLUE H ERON BLVD. • RIVIERA BEACH. FLORIDA 33404 T E L : 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER D ra in -s o u rc e 600V,

Contextual Info: Æ iîtr a n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY. WEST P ALM BEACH. FLORIDA 33407 T E L : 407 848-4311 FAX: (407) 863-5946 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a in - s o u r c e Vo I t .(1) D r a in- Ga te Vo 1t age

Contextual Info: Æ litro n PRODUCT DEVICES.INC. 330] ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33-107 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 500V, 2.5A, 3. On ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Vo 1t .(1) Dra in-Ga te Vo 1tage

Contextual Info: Æwtran PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V, SYMBOL UNITS Drain-source Vo 1t .(1) Dra in -Ga te Vo 1tage (Rgs = 1•O M n ) Cl)

DS25-.A

Abstract: GA mosfet
Contextual Info: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)

Contextual Info: JËiltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 1177 BLUE H ERON BLVD. • RIVIERA BEACH. FLORIDA 33404 T E L : 407 848-4311 • TLX: S I -3435 • FAX: (407) 883-5946 600V, 4.0A, 2 . in ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a i n - s o u r c e Vo 1t .(1)

Contextual Info: ^»litron PRODUCT CÂTÂL ' DEVICES.INC. 3301 ELECTRONICS WAY • WEST PALM BEACH,FLORIDA 33407 TEL: -407 848-4311 • TLX: 51 -3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET 600V, 1 .5A, 6 . 0 0 ABSOLUTE MAXIMUM RATINGS PARAMETER D r a in - s o u r c e Vo I t . ( 1)

Contextual Info: Æwtion PRODUCT CÂTÂLÛi D EV I CE S. IN C. N-CHANNEL ENHANCEMENT MOS FET 3301 ELECTRONICS WAY • WEST PALM BEACH. FLORIDA 33407 T E L : 407 8 4 8 - 4 3 J 1 • TLX: 51 -3435 • FAX: (407) 8G3-5946 800V, 9.0A, 1 . 4 0 ABSOLUTE MAXIMUM RATINGS PARAMETER

Contextual Info: Æ lltron IFIR DUCT CÂTÂL©1 D E V IC E S .IN C . 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 T E L : 407 848-4311 FAX: (407) 863-5946 A B SO LU TE MAXIMUM 400V, 15A, 0 .3 0 Q RA TIN G S PARAMETER SYMBOL D roin-source Vo 1 t . ( 1 ) D r a i n - G a t e Vo 1t a g e

Contextual Info: • bb53T31 00243b3 407 N AHER PHILIPS/DISCRETE APX BAV74 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The device consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the device is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: JHltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MÜS FET 3301 E L E C T R O N I C S W A Y • W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 0 6 3 - 5 9 4 6 MAXIMUM SYMBOL PARAMETER D r □ in-source Volt.(l)

K791

Abstract: Diode FAJ package Diode FAJ Diode FAJ 45
Contextual Info: [ • 9 m iELECIIIIIU GaAs INFRARED EMITTING DIODE 1N626S The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING PILANE -Mh t 11 * Good optica! to m echanical alignment ST1331 e 8, INCHES MILUMETERS MOTES MIN. MAX MAX. MIN. .155 3 53 .616 .407 ,533

CCSTA53N30A10

Abstract: ccsta53n30 Solidtron GTO thyristor Curve properties 741 Ic1 SCR TRIGGER PULSE TRANSFORMER GTO thyristor Application notes resistor 4700 ohm THYRISTOR GTO Thyristor pulse transformer
Contextual Info: CCSTA53N30A10 275 Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 SolidtronTM N-Type Semiconductor Discharge Switch, ThinPakTM Description Package Size - 9 Cathode contacts SolidtronTM This current controlled CCS discharge switch is an n-type Thyristor in a high performance ThinPakTM package. The

Contextual Info: • bhSB'lBl 002b40b 407 « A P X N AUER PHILIPS/DISCRETE B B 212 b^E D A.M. VARIABLE CAPACITANCE DOUBLE DIODES The BB212 is a double 9V variable capacitance diode w ith common cathode in a plastic TO-92 variant. A special feature is the low tuning voltage which makes the device particularly suited to car and

Contextual Info: Struthers-Dunn 407 East Smith Street - Suite B Timmonsville, SC 29161 US Phone: 843 346-4427 • Fax: (843) 346-4465 E-Mail: info@struthers-dunn.com • Web site:www.struthers-dunn.com 134 Series - Mercury Reed Relays The 134 series are single throw, normally open, miniature mercury reed relays. Reeds are hermetically sealed in glass tubes with trace amounts of liquid mercury to

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

Contextual Info: ^ litr o n PRODUCT ÛÂTÂLQ" D E V IC E S .IN C . N-CHANNEL ENHANCEMENT MOS FET 3301 E L E C T R O N I C S WAY • WEST P A L M B E A C H . F L O R I D A 3 3 4 0 7 4 TEL : 407 848-431 1 • TLX: 5 1 - 3 4 3 5 « F A X : (4 0 7 ) 8 6 3 -5 9 4 6 ABSOLUTE

semikron skiip 1242 gb 120

Abstract: F 407 Diode semikron 1242 gb 120 SKIIP CASE S4 SKIIP DRIVER 1242 skiip gb 120 SKIIPPACK 1242gb semikron skiip 1242 D1242
Contextual Info: SKiiP 1242 GB 120 - 407 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

Contextual Info: tSENSITRON 161CMQ045 161CMQ040 161CMQ035 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 407, REV.- HIGH CURRENT PLASTIC POWER SCHOTTKY RECTIFIER 45 V, 160 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

161CMQ045

Contextual Info: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 407, REV.- 161CMQ045 161CMQ040 161CMQ035 HIGH CURRENT PLASTIC POWER SCHOTTKY RECTIFIER 45 V, 160 A Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode

Contextual Info: ^¡»litron PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY, WEST PALM BEACH. FLORIDA 33407 TEL: 407 848-4311 FAX: (407) 863-5946 ULTRA FAST RECOVERY RECTIFIERS 400V, MAXIMUM RATINGS PER DIODE UNITS SYMBOL PARAMETER WORKING PEAK REVERSE VOLTAGE VRRM 400 V 8 A 100

diode b1c

Contextual Info: SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET L<BB LOBB Q< Q<W ?- G HI J$K 407,- %*8,23.-, -', .6.,+ ?- G HI ;SN> J$T M> *' X M &-T ?- G SN J$T M> ?Y Inverse diode SEMITOP 2 MOSFET Module Q] G @ Q< Q]W G @ Q<W ?Y Preliminary Data

Contextual Info: SK 300MB075 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET O<AA OQAA T< T<F ?- J NL M$G 407,- %*8,23.-, -', .6.,+ ?- J NL ;KS> M$U V> *' Y V &-U ?- J NL ;KS> M$U V> ?[ Inverse diode SEMITOP 3 Mosfet Module T_ J ¥ T< T_F J ¥ T<F ?- J NL ;KS> M$U