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    SDF350 Search Results

    SDF350 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SDF350
    		Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 15, Idm Pulsed (A) = 60, RDS (On) (Ohms) = 0... Scan PDF 159.82KB 1
    SDF350JAAD
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1
    SDF350JAAS
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1
    SDF350JAAU
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1
    SDF350JABD
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1
    SDF350JABS
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1
    SDF350JABU
    		Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF 159.82KB 1

    SDF350 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SDF350JAAEHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAAEHD1N PDF

    Contextual Info: SDF350JABSGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABSGSN PDF

    Contextual Info: SDF350JAAXGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAAXGSN PDF

    Contextual Info: SDF350JAASGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAASGSN PDF

    Contextual Info: SDF350JAAEGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAAEGU1N PDF

    Contextual Info: SDF350JABVGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABVGD1N PDF

    Contextual Info: SDF350JAASHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAASHU1N PDF

    Contextual Info: SDF350JABXGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABXGU1N PDF

    Contextual Info: SDF350JABEGD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABEGD1N PDF

    Contextual Info: SDF350JAAVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JAAVHD1N PDF

    Contextual Info: SDF350JABEHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABEHD1N PDF

    Contextual Info: SDF350JABVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABVHD1N PDF

    Contextual Info: SDF350JABSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)15 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)60 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		SDF350JABSHU1N PDF

    SDF350

    Contextual Info: Æ ntron PRODUCT CÂTÂLO' DEVICES.INC. N -CH ANN EL ENHANCEMENT MOS F E T 400V, 15A, 0.30G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL D r a i n - s o u r c e Vo l t . l Dra in-Ga te Vo Itage (Rg s =1.0Mo ) (1) Gate-Source Voltage Continuous Drain C u rrent C o n t i n u o u s


    OCR Scan     		00A/jjls SDF350 SDF350 MIL-S-19500 300nS. PDF

    Contextual Info: Æ lltron IFIR DUCT CÂTÂL©1 D E V IC E S .IN C . 3301 ELECTRONICS WAY. WEST PALM BEACH. FLORIDA 33407 T E L : 407 848-4311 FAX: (407) 863-5946 A B SO LU TE MAXIMUM 400V, 15A, 0 .3 0 Q RA TIN G S PARAMETER SYMBOL D roin-source Vo 1 t . ( 1 ) D r a i n - G a t e Vo 1t a g e


    OCR Scan     		300mS, fl3bfib02 PDF