IIP31 Search Results

PC8187TB

Abstract: Monolithic Function Generator
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8187TB SILICON MMIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The μPC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional

Transistor C3E

Abstract: C2H marking
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

PC8109

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8187TB SILICON MMIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The μPC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: Contributes to Size Reductions of Communication Devices Single Band LNA-IC for 600MHz Band Applications AN26027A „ Overview • AN26027A is single band LNA Low Noise Amplifier -IC for 600MHz Band applications. • Realizing high performance by using 0.18 µm SiGeC Bi-CMOS

300 MHZ LNA

Contextual Info: Contributes to Size Reductions of Communication Devices LNA IC for UHF Band 400 MHz to 800 MHz Applications AN26015A „ Overview • AN26015A is LNA-IC for Single Band LNA-IC for 400MHz to 800 MHz Band Applications. • Realizing high performance by using 0.18 mm SiGe Bi-CMOS

NJG1104KB2

Abstract: GRM36 HK1005 HK1608
Contextual Info: NJG1104KB2 800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC •GENERAL DESCRIPTION NJG1104KB2 is a variable gain low noise amplifier LNA . At 800MHz band, noise figure is 1.2dB, variable gain range is 21dB and input 3rd order intercept point is +6dBm. These characteristics are very suitable for CDMA cellular phone

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

LL2012-FR47

Abstract: IIP32 analysis PCS1900 UPC8106TB UPC8109TB UPC8172TB
Contextual Info: SILICON RFIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER FEATURES UPC8172TB BLOCK DIAGRAM • RECOMMENDED OPERATING FREQUENCY: fRFout = 0.8 to 2.5 GHz • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V • HIGHER IP3 AND CONVERSION GAIN: CG = 9.5 dB TYP OIP3 = +7.5 dBm TYP @ fRFout = 0.9 GHz

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

hsdpa

Abstract: BGA736L16 TGS 800
Contextual Info: D a t a S he et , V 2. 1, J u l y 2 00 8 B G A 7 36 L1 6 Tri-Band HSDPA LNA 2 1 00 , 1 9 0 0/ 2 1 0 0 , 8 0 0 / 9 00 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.

marking C3U

Abstract: 24-70MHZ T6N 600 HS350
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC3237TK

Abstract: 2T 970
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

transistor SMD MARKING CODE 772

Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

s22b

Abstract: S11A S22A GRM033B11A103KA01 GRM033B30J104KE18 LQP03TN5N6H04 LQP03TN6N8H04
Contextual Info: DATA SHEET Part No. AN26016A Package Code No. SSMINI-5DC Publication date: October 2011 Ver. AEB 1 AN26016A Contents „ Overview ………………………………………………….…………………………………………………………. 3

PC2710TB

Abstract: marking c3j
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2.4 ghz Transceiver IC audio

Abstract: VCO NEC 2.4 ghz transmitter rf test
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8172TB SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 Ultra High Speed Process

RF Transceiver 1.9 ghz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8172TB SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz fmax. UHS0 Ultra High Speed Process

BFP620 applications note

Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
Contextual Info: A pp l ic a t io n N o t e, R e v . 3. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 6 0 A H i g h T h i r d- O r d e r I nt e r c e pt L o w N o i s e A m p l i f i e r f o r 1 9 0 0 M H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid