IGS TECHNOLOGIES, INC Search Results

A Comprehensive PHEMT Core Model For Switch Applications

Contextual Info: A Comprehensive PHEMT Core Model For Switch Applications Ce-Jun Wei, Yu Zhu, Hong Yin, Olesky Klimashov, and Dylan Bartle Skyworks Solutions Inc. 20 Sylvan Road Woburn, MA 01801 USA 20 Sylvan Road, Woburn, MA 01801, USA Abstract — A comprehensive non-linear PHEMT core model

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD CR03AM-12 Preliminary SCR THYRISTOR „ DESCRIPTION The UTC CR03AM-12 is suitable for low power applications. „ FEATURES 1 * IT AV : 0.3 A * VDRM : 600 V * IGT : 100 A * Non-Insulated Type * Glass Passivation Type „ TO-92

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N90Z Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90Z provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

nortel meridian option 81c

Abstract: nortel meridian option 81c release 25 backplane design cpci nortel meridian nortel meridian option 81c release 25 download CPV5350 NORTEL OC-12
Contextual Info: Data Sheet Call Processor PII for Meridian 1 Option 81C Systems Call Processor PII CP PII more than doubles the processing capacity of multi-group systems (Option 81C) Overview Nortel Networks, a long-time leader in the delivery of highly reliable, state-of-the-art

3n80

Abstract: 3n80 data sheet 400v 3a ultra fast recovery diode 3n80 rds
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Preliminary Power MOSFET 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

"VDSS 800V" mosfet

Abstract: 3N80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

HAF2005

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

8f sot-343

Abstract: ATF-58143 application notes JUMPER-0805 ATF-58143-BLK marking 55 Sot-343 A004R ATF-58143 ATF-58143-BLKG marking code c3 sot 23 ATF-58143-TR1G
Contextual Info: Agilent ATF-58143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • Low noise and high linearity performance • Enhancement Mode Technology[1] • Excellent uniformity in product specifications The combination of high gain,

HAF2007

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

LG 5804

Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

2481G1-D0

Abstract: SFC1480
Contextual Info: Pamphlet 1480G 2480G series Hitachi Metals, Ltd. Proposal for a new generation ™ 1480G 2480G 2 series mass flow controller From the release of the first of our SFC480 series, SAM brand high-performance mass flow controllers continue in the tradition of perfection. High corrosion resistance and

SC400

Abstract: boot loader
Contextual Info: Élan SC400 Windows CE XIP CodeKit Software Embedded Processor Division V1.0 - September 21, 1998 Readme File : Version 1.0 - September 21, 1998 1 Overview This CodeKit software contains all the source code and documentation required to modify a standard

HAF1001

Abstract: HAF1001-90 PRSS0004AC-A
Contextual Info: HAF1001 Silicon P Channel MOS FET Series Power Switching REJ03G1132-0400 Previous: ADE-208-583A Rev.4.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

HAF2025-90STL

Abstract: HAF2025-90S HAF2025-90STR HAF2025S
Contextual Info: HAF2025 L , HAF2025(S) Silicon N Channel Power MOS FET Power Switching REJ03G0145-0300Z Rev.3.00 Apr.22.2004 Descriptions This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of

HAF2017

Abstract: HAF2017-90L HAF2017-90S HAF2017-90STL
Contextual Info: HAF2017 L , HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z) Rev.2.00 Apr.13.2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in

HAF1009

Contextual Info: HAF1009 L , HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z) Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

ATF-54143-TR1G

Abstract: l0746 A004R ATF-54143 C0159 ATF-54143 application notes transistor c4 5.8 ghz amplifier 10w
Contextual Info: ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’ ATF‑54143 is a high dynamic range, low noise, E-PHEMT housed in a 4‑lead SC-70 SOT‑343 surface mount plastic package.

Contextual Info: BGA771N16 High Linearity Dual-Band UMTS LNA 1900/1800/2100, 800/900MHz Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

HAF2021-90S

Abstract: HAF2021 HAF2021-90L
Contextual Info: HAF2021 L , HAF2021(S) Silicon N Channel MOS FET Series Power Switching REJ03G0179-0200Z (Previous ADE-208-1459A(Z) Rev.2.00 Mar.05.2004 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in

HAF1008

Contextual Info: HAF1008 L , HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

HAF1004

Abstract: ADE-208-629B
Contextual Info: HAF1004 L , HAF1004(S) Silicon P Channel MOS FET Series Power Switching REJ03G0028-0500Z (Previous ADE-208-629B (Z) Rev.5.00 2003.04.29 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the

HAF2002

Abstract: HAF2002-90 HD74LS08 PRSS0003AD-A
Contextual Info: HAF2002 Silicon N Channel MOS FET Series Power Switching REJ03G1135-0300 Previous: ADE-208-503A Rev.3.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

HAF2001

Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
Contextual Info: HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0600 Previous: ADE-208-353D Rev.6.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down

Contextual Info: Pamphlet SFC1480FX SFC2480FX series Hitachi Metals, Ltd. Passing along the tradition from F to FX, a ™ SFC1480FX SFC2480FX series From F to FX: Passing along the tradition Since the first of our SFC480 series, SAM brand highperformance mass flow controllers have been carrying forward a