00JJ Search Results

ir10 diode

Abstract: diode IR10 FMMD7000 00JJ
Contextual Info: FMMD7000 PAGE NUM BER SOT23 SILICON PLANAR HIGH SPEED SWrrCHING DIODE PAIR SERIES FMMD7000 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTM ARKIN G D ETA IL - 5C -fr h r N - ABSOLUTE MAXIMUM RATINGS. PA RA M ETER Breakdown Voltage Voltage S YM B O L ( l R=1 00jj.A)

2N5463

Abstract: 2N5465 2N5464 2N5460 2N5461 2N5462 2n5463-5
Contextual Info: S IL IC O N IX INC 1ÎE I> 8 2 54 7 3 5 0013Ä50 S 2N5460 SERIES f ü Z 'S ilic o n ix JtJw • in c o r p o r a ts d P-Channel JFETs _ r - 'ä S - 2 S The 2N5460 Series are low cost p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog , switchapplications. This series features two ranges of

Contextual Info: L9703 OCTAL GROUND CONTACT MONITORING CIRCUIT • OPERATING DC SUPPLY VOLTAGE RANGE 5V TO 25V ■ SUPPLY OVERVOLTAGE PULSE UP TO 40V ■ VERY LOW STANDBY Q UIESCENT CUR­ RENT 0.2mA ■ INTERNAL CLAMPING DIODES AT CONTACT INPUTS TO Vs AND GND . INPUT PULSE CURRENT CAPABILITY UP TO

MT41LC256K32D4

Contextual Info: PR EL IM IN AR Y MICRON I MT41LC256K32D4 S 2 56K x 32 S G R A M TECHNOLOGY, INC. SYNCHRONOUS G R A P H I C S RAM 256K x 32 S G R A M PULSED RAS#, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES * Fully synchronous; all signals registered on positive edge of system clock

Contextual Info: technoj^ies InNET TECHNOLOGIES 6 1 T2606S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S 1 i 2CT - 1 J-(32) TURNS RATIO: : 1 : 2CT ± 3% (PRI TO SEC) INDUCTANCE: (PRI’S) : 1.2mH MIN. P 0.01V, 100KHz - LEAKAGE INDUCTANCE:

equivalent transistor of F2B transistor

Abstract: 2N6429 equivalent
Contextual Info: CRUMB CA408/CA411 FM RECEIVER CHIP SET FOR DATA The CA408/CA411 chip set is a low power radio receiver for FM data transmission systems. Receiver simplicity and cost efficiency are achieved by using a direct conversion technique that converts V H F directly to audio.

z24 mosfet

Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
Contextual Info: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

TRANSISTOR BH RW

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A M A Y 1998 F E A TU R E S * C o m p a ct package * L o w o n s ta te lo s s e s * L o w d r iv e re q u ire m e n ts * O p e ra te s u p to 7 0 V s u p p ly * 1 A m p c o n tin u o u s ra tin g

ts 8808

Abstract: 0x071C
Contextual Info: TNETX4090 ThunderSWITCH II 9-PORT 100-/1OOO-MBIT/S ETHERNET™ SWITCH • Single-Chip 100-/1000-Mbit/s Device • • Integrated Physical Coding Sublayer PCS Logic Provides Direct Interface to Gigabit Transceivers Port Trunking/Load Sharing for High-Bandwidth Interswitch Links

Contextual Info: UNCONTROLLED DOCUMENT PART SSL-LX3054LID NU M BER DATE 0 4 .0 0 E.C.N. N U M B ER AND REVISION COM M ENTS. A 04.16.01 E.C.N. # 1 0 B R D R . & REDRAWN IN 3D. B 09.26.11 E.C.N. # 1 0 B R D R . & REDRAWN. C E LEC TR O -O PTIC A L CHARACTERISTICS T a = 2 5 'C

pentium iv motherboard circuit diagram

Contextual Info: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RCB006 5 Bit V o l t a g e R e g u l a t o r M o d u l e VRM f or P e n t i u m II P r o c e s s o r s For 12 V I n p u t V o l t a g e Features Description • • • •

ir10 diode

Abstract: diode IR10 FMMD7000 FMMD6050
Contextual Info: PAGE NUMBER SOT23 SILICON PLANAR HIGH SPEED FMMD6050 SWrrCHING DIODE ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL - 5A AL 3 5 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT V BR 70 V Peak Forward Current If 200 mA Peak Forward Surge Current

SSL-LX3044CD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSF-LXHM240GGD 2.50 [0.098] 4.92 CO.194] 4.62 [0.182] 4.32 [0.170] 0 2 ,9 0 [0 0 ,1 1 4 ] 5,08 [0,200] 2 PLS.5 [0.380: 2.54 [0.100] [0.125: ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C lf= 2 0 m A PARAMETER MIN TYP MAX

NEC JAPAN IC D780

Abstract: NEC D780 NEC Electronics uPD Series PGM1A 78P083 D7807 capacitor 3J3 d780 nec
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP M ICROCONTROLLER DESCRIPTION The /xPD78P083 A is a member of the /¿PD78083 Subseries of the 78K/0 Series products. Comparing with the ¿¿PD78P083 (standard), more strict quality assurance programs are applied to this product (called Special of the quality

Contextual Info: Central" CLL4448 Semiconductor Corp. HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in a hermetically sealed glass surface mount pack­

scart to vga

Abstract: schematic diagram of TV memory writer MC 7805 CK samsung crt monitor rgb cable schematic diagram scart to vga IGS003 bdac for cpu IGS TECHNOLOGIES m1d 95 free vga to rca schematic
Contextual Info: CyberPro2010 Data Sheet Revision 2.01 &\EHU3URŒ CyberPro2010 Key Features Multimedia Graphics • 64-bit GUI Graphics • 200 MHz RAMDAC • Shadow register compatibility for popular video Accelerator and games Enhanced Digital TV TV Encoder • 6 on-chip DACS provide simultaneous S-video,