IGO TV Search Results

2sb834 mx

Abstract: mx 2sb834 IC LM317 CIRCUITS 2sd880 equivalent npn 400 v 1.5 a BUT11 2SA940 BD941 igo tv data sheet tip41 file type
Contextual Info: MX-MICROELECTRONICS TO-220 PACKAGE Applied widely for: • • • • TV,Av,power amplifiers power drive e.c.t. ac energy saving lights power amplifiers power switch and speedy circuits DC regulators of electronical devices and calcukators • Applied widely for TV,Av,power amplifiers power drive e.c.t. ac

mx 2sb834

Abstract: 2sb834 mx LB125 2sa940 2sc2073 MJE13005 tip41c pins tip127 data REG lm317 IC LM317 DATA SHEET 2SC2073
Contextual Info: TO-220 PACKAGE MX MICROELECTRONICS ● Applied widely for TV,Av,power amplifiers power drive e.c.t. Pd TYPE NPN *Tc= OR 25℃ W PNP 2SA940 2SC2073 2SD880 2SB834 2SD313 BD941 BD949 BD950 BU406 BUT11 BUT11A PNP NPN NPN PNP NPN NPN NPN PNP NPN NPN NPN ICBO

scr 15 amps

Abstract: 20 AMPS SCR SWITCH SCR POWER SUPPLY philips TV power supply ecg scr hi speed ECG thyristor Gate Turn-off Thyristor to220 scr 25 amps ECG279A Philips ECG279A
Contextual Info: PHILIPS E C G INC S4E j> m tbS3q2fl 0GG721Û 1T2 H E C G Gate Turn-Off - SCR For TV Applications Package E C 6 Type ECG Z76 ECGZ79A Description/ Application Gate Turn O ff S C R Gate Turn O ff S C R VDR M Volts 1250 350 it r m s Am ps 5 'Surge (Amps) 80

BF420

Abstract: BF421 BF420 kec
Contextual Info: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BF420 SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES • High Voltage : Vceo>300V • Complementary to BF421. MAXIMUM RATINGS Ta=25°C

npn 8050 ecb

Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
Contextual Info: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100

IGO tv circuit diagram

Contextual Info: L IN E A R M O NO LITHIC IN TEG RA TED C IR C U IT S IC’s For TV Electrical Characteristics Ta=25°C Type No. Function Maximum Ratings (Ta=25”C) Symbol Item Condition min. typ. max. Unit 10 14 20 mA 8 11 Sound M ultiplex Signal P rocessing C ircu it

16PIN

Abstract: circuit power supply
Contextual Info: M Product Preview SMARTMOS R MPC17533 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU. This IC can control 4 mode output function

16PIN

Abstract: MPC17533 OUT2B
Contextual Info: Freescale Semiconductor, Inc. M Product Preview SMARTMOS R MPC17533 Freescale Semiconductor, Inc. 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU.

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2M121A

Abstract: magnetron hitachi 2M121 magnetron 2m210-m1 HMR-100 hitachi 3284ps water flow meter
Contextual Info: TEST SPESIFICATIONS Type : 2M121A Description : Continuous Wave Magnetron for Microwave Ovens, 2450 MHz, Fixed Frequency. Absolute Maximum Ratings : Symbol Min. Max. Unit Note Filament Voltage Ef 4.2 5.0 V 8,9 Pre — heating Time tk — sec 8 Peak Anode Voltage

Contextual Info: Schottky Barrier Diode Twin Diode Wtm D4SC6M OUTLINE 60V 4A Feature • Tj=150°C • • Tj=150°C P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating • Full Molded Main Use • Switching Regulator • DC/DC Z \ yj K - S • DC/DC Converter • m m . < f- a . o a ü î h

Contextual Info: M 2 fV I$ C § T S & fY I! 140 C o m m e rc e D riv e W fo n tg o m e iy v ilte , PA 1893 6-10 13 Tel: 215) 631-9840 SD1536-8 RF & MiCROWAVE TRANSISTORS IFF/D ME APPLICATIONS DESIGNATED FOR HIGH POWER PULSE IFF, DM!'' TACAN 100 W ATTS (typ.) IFF 1030-1090M Hz

Contextual Info: Advanced IR F W /I8 4 0 A P o w e r M O SFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ~ ■ Lower Input Capacitance lD = 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10jiA (M ax.) @ VOS = 500V

Contextual Info: TOSHIBA MIG200Q101 H T O SH IBA INTELLIGENT GTR M O D U LE M« • i ■ f ■ i ? n n SILICON N CHANN EL IGBT n i n i ■ n■ ■ HIGH PO W ER SWITCHING APPLICATIONS M O T O R CONTROL APPLICATIONS • Integrates Inverter Power Circuits & Control Circuits IGBT drive units, Protection units for OverCurrent, Under-Voltage & Over-Temperature in One Package.

S2E12

Abstract: motor IG 2200 19 X 000 15 R skkt 40 12
Contextual Info: SEMIKRON Vrsm V rrm dvl V drm cft cr V 700 V Itr m s {maximum value for continuous operation) 125 A Itav (sin. 180; Teas = 78 °C) 80 A V/\is 600 900 800 1300 1200 1300 _ 500 SKKT 71/06 D SKKH 72/D6 D - 500 SKKT 71/08 D SKKT 72/08 D1) SKKH 71/08 D 500 SKKT 71/12 D

IGO tv circuit diagram

Abstract: zn8g
Contextual Info: FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 2 - APRIL 1998 DEVICE DESCRIPTION ZNBG3110 ZNBG3111 These devices are un con ditio na lly stable over the full w orking tem perature w ith the FETs in place, subject to the inclusion o f the

Contextual Info: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q

Contextual Info: International PD - 9.1242B |IQR|Rectifier IRF7307 PRELIMINARY HEXFET Power M OSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

irfp3710

Abstract: RFPE30
Contextual Info: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2

AEG T60N 1200

Abstract: aeg thyristors AEG T 25 N 1100 T60N 600 AEG T 51 N 1200 irs 2110 T60N aeg tt AEG T 99 N 800 AEG tt 45 F 800
Contextual Info: 0029426 A E G öl CORP D E O D 2 ^ 2b □ODbO'lö D | T Typenreihe/Type range_ T60N 400* 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values U d rh,U rrm Periodische Vorwärts-und repetitive peak forward off-state

2sc 1364 transistor

Abstract: LS 1316 0/2sc 1364 transistor
Contextual Info: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 JANTX2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

IR 006

Abstract: IRF7521D1
Contextual Info: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint