IGBT 70A Search Results

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

APT70GR120J

Contextual Info: APT70GR120J APT70GR120J 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

V544

Abstract: 70A 1200V IGBTS
Contextual Info: APT70GR120B2_L APT70GR120B2 APT70GR120L 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

APT70GR120J

Contextual Info: APT70GR120JD60 APT70GR120JD60 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.

Diode smd code EXP

Contextual Info: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC

Contextual Info: Bulletin I27247 08/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC • Al2O3 DBC

Contextual Info: Bulletin I27247 rev. B 11/06 70MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp2 Speed IGBT Features VCES = 600V • NPT Warp2 Speed IGBT Technology with Positive Temperature Coefficient • Hexfred Antiparallel Diodes with UltraSoft Reverse Recovery • SMD Thermistor NTC

LIN opto isolator

Abstract: SPM6G080-060D IC 4098
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

LIN opto isolator

Abstract: diode piv 800 50A IGBT desaturation SPM6G080-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

diode sy 160

Abstract: n 4113 SPM6G150-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

3 phase IGBT gate driver 1200

Abstract: SPM6G140-120D IGBT 50 amp 1200 volt
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: tSENSITRON SPM6G150-060D SEMICONDUCTOR TECHNICAL DATA DATASHEET 4113, REV ENG- Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

SPM6G150-060D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G150-060D TECHNICAL DATA DATASHEET 4113, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

C 4977

Abstract: ON 4977 3 phase IGBT gate driver 1200 3 phase IGBT gate driver 4977 IGBT gate driver ic DS34C87 SPM6G140-060D OF IGBT
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

4100 data sheet

Abstract: IGBT gate driver ic 210C DS34C87 SFH6186-4 SPM6G120-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 60A

Abstract: tp 806 IGBT DRIVER SCHEMATIC 3 PHASE SPM6G140-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

driver igbt high side 1500V

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 REV.A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

C 4977

Abstract: ON 4977 SPM6G140-060D
Contextual Info: SENSITRON _ SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA Data Sheet 4977 Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

Abstract: SPM6G070-060D 210C DS34C87 SFH6186-4
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A.1 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-060D TECHNICAL DATA Data Sheet 4098, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT DRIVER SCHEMATIC 3 PHASE

Abstract: 3 phase igbt driver schematic
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G080-120D TECHNICAL DATA DATASHEET 4099, REV C Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

IGBT 60A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G140-120D TECHNICAL DATA DATASHEET 4100, REV B Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

3 phase IGBT gate driver

Abstract: 3 phase IGBT gate driver 1200 4100 opto coupler high side IGBT driver IGBT gate driver ic opto-isolators current sensor DS34C87 SFH6186-4 SPM6G120-120D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA Data Sheet 4100 Rev. - Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE