IGBT 600V 30A Search Results
IGBT 600V 30A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 600V 30A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3 |
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APTGV30H60T3G | |
APT0406
Abstract: APT0502 APTGV30H60T3G
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APTGV30H60T3G APT0406 APT0502 APTGV30H60T3G | |
IXGR60N60C3C1
Abstract: G60N60 60N60C3 IF110 ISOPLUS247
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IXGR60N60C3C1 IC110 40-100kHz 247TM IF110 60N60C3C1 IXGR60N60C3C1 G60N60 60N60C3 IF110 ISOPLUS247 | |
G60N60
Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
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IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A G60N60 IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode | |
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Contextual Info: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES |
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IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A | |
E80276
Abstract: PM75RVA060
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PM75RVA060 20kHz E80276 E80271 PM75RVA060 | |
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Contextual Info: SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 30A |
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SIGC25T60NC Q67050-A4143A001 7262-M, | |
APT0502
Abstract: 50CT
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APTCV60TLM991G APT0502 50CT | |
APT0406
Abstract: APT0502
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APTCV60TLM99T3G APT0406 APT0502 | |
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Contextual Info: SIGC25T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC25T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 30A |
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SIGC25T60NC Q67050-A4143A001 7262-M, | |
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Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM75RVA060 PM75RVA060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM75RVA060 FEATURE • • • • 3φ 75A, 600V Current-sense IGBT for 20kHz switching 30A, 600V Current-sense regenerative brake IGBT |
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PM75RVA060 20kHz E80276 E80271 131ROL | |
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Contextual Info: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter |
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APTGV100H60T3G | |
30N60B3D
Abstract: IXXH30N60B3 IXXH30N60
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IXXH30N60B3 IC110 125ns O-247 062in. 30N60B3D1 30N60B3D IXXH30N60B3 IXXH30N60 | |
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Contextual Info: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3 |
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APTGV50H60T3G | |
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APT0406
Abstract: APT0502 APTGV100H60T3G
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APTGV100H60T3G APT0406 APT0502 APTGV100H60T3G | |
APT0406
Abstract: APT0502 APTGV75H60T3G
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APTGV75H60T3G APT0406 APT0502 APTGV75H60T3G | |
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Contextual Info: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3 |
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APTGV75H60T3G | |
IXXH30N60B3D1Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH30N60B3D1 125ns O-247 IF110 30N60B3D1 IXXH30N60B3D1 | |
30N60C3D
Abstract: 30N60C3D1 IXXH30N60 30N60C3 ixxh30n60c3d1
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IXXH30N60C3D1 IC110 O-247 IF110 062in. 30N60C3D1 30N60C3D IXXH30N60 30N60C3 ixxh30n60c3d1 | |
30N60C3DContextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 30A 2.2V 32ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH30N60C3D1 O-247 IF110 30N60C3D1 30N60C3D | |
g60n
Abstract: 60N60C
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IXGR60N60C3D1 IC110 IF110 60N60C3 01-15-10-E g60n 60N60C | |
30N60B3D
Abstract: 30N60B3 IXXH30N60B3D1
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IXXH30N60B3D1 IC110 125ns O-247 IF110 062in. 30N60B3D1 30N60B3D 30N60B3 IXXH30N60B3D1 | |
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Contextual Info: Advance Technical Information IXXH30N60C3 XPTTM 600V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 600V 30A 2.2V 32ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXXH30N60C3 IC110 O-247 30N60C3D1 | |
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Contextual Info: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4: |
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APTGV50H60BG | |