IGBT 600V 200A Search Results

IGBT DRIVE 600V 300A

Abstract: what is fast IGBT transistor igbt 600V 300A QIQ0630003 fast recovery diode 600v 1200A
Contextual Info: QIQ0630003 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy

GATE VOLTAGE FOR 300A ,600V IGBT

Abstract: fast recovery diode 600v 1200A IGBT DRIVE 600V 300A igbt 600V diode 600v IGBT 600V 16 QIQ0630003
Contextual Info: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy

igbt 600V 300A

Abstract: QIQ0630003 GATE VOLTAGE FOR 300A ,600V IGBT E1. N diode IGBT 600V 16 igbt 600V IGBT DRIVE 600V 300A
Contextual Info: QIQ0630003 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 724 925-7272 www.pwrx.com Low side Chopper IGBT Module 600V 300A IGBT / 600V 300A Fast Diode Description: Powerex Low side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy

SIGC156T60NR2C

Abstract: A001 7282M
Contextual Info: Preliminary SIGC156T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC156T60NR2C 600V ICn 200A C This chip is used for: • IGBT-Modules

Contextual Info: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter

Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3

APT0406

Abstract: APT0502 APTGV30H60T3G
Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter

Contextual Info: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3

APTGV50H60T3G

Abstract: APT0406 APT0502
Contextual Info: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Q3 11 • Solar converter

APT0406

Abstract: APT0502 APTGV100H60T3G
Contextual Info: APTGV100H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80°C Q3 11 • Solar converter

APT0406

Abstract: APT0502 APTGV75H60T3G
Contextual Info: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Q3 11 • Solar converter

Contextual Info: APTGV75H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 60A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR

MMIX1X200N60B3

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR

Contextual Info: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4:

MMIX1X200N60B3H1

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

72N60A3

Abstract: IXGR72N60A3H1 IF110 ISOPLUS247
Contextual Info: Advance Technical Information IXGR72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGR72N60A3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings

Contextual Info: Preliminary Technical Information IXGR72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

IXGR72N60B3H1

Abstract: 72N60B3 IF110 ISOPLUS247 180v dc motor speed control
Contextual Info: Preliminary Technical Information IXGR72N60B3H1 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings